VS-ST180S12P0V Vishay Semiconductors, VS-ST180S12P0V Datasheet - Page 4

• Manufacturer Part Number: VS-ST180S12P0V
• Description: SCRs 1200 Volt 200 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST180S12P0V

• Product Category: SCRs
• Breakover Current Ibo Max: 5230 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Factory Pack Quantity: 12

ST180SPbF Series
Vishay High Power Products
www.vishay.com
4
130
120
110
100
90
80
0
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
40
S T 180S S eries
R
30°
350
300
250
200
150
100
thJC
500
450
400
350
300
250
200
150
100
50
50
80
0
0
0
0
60°
(DC) = 0.105 K/ W
RMS Limit
RMS Limit
120
40
90°
Average On-state Current (A)
40
Average On-state Current (A)
180°
120°
Conduc tion Angle
180°
120°
DC
90°
60°
30°
90°
60°
30°
120°
80 120 160 200 240 280 320
160
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80
180°
200
120
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Phase Control Thyristors
Conduction Period
Conduc tion Angle
(Stud Version), 200 A
S T 180S S eries
T = 125°C
240
S T 180S S eries
T = 125°C
J
160
J
200
240
25
25
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emperature (°C)
50
50
130
120
110
100
90
80
70
0
75
75
Fig. 2 - Current Ratings Characteristics
50
Average On-state Current (A)
30°
100
100
100 150 200 250 300 350
S T 180S S eries
R
thJC
60°
90°
(DC) = 0.105 K/ W
125
120°
125
Conduc tion Period
180°
Document Number: 94397
Revision: 11-Aug-08
DC