VS-ST180S12P0V Vishay Semiconductors, VS-ST180S12P0V Datasheet - Page 5

• Manufacturer Part Number: VS-ST180S12P0V
• Description: SCRs 1200 Volt 200 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST180S12P0V

• Product Category: SCRs
• Breakover Current Ibo Max: 5230 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Factory Pack Quantity: 12

Document Number: 94397
Revision: 11-Aug-08
Number Of Equal Amplitude Half Cycle Current Pulses (N)
4800
4400
4000
3600
3200
2800
2400
2000
Fig. 5 - Maximum Non-Repetitive Surge Current
1
At Any Rated Load Condition And With
S T 180S S eries
Rated V
R RM
0.001
0.01
0.1
Applied Following S urge.
0.001
1
10
S teady State Value
R
(DC Operation)
thJC
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
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= 0.105 K/ W
J
10000
1000
Phase Control Thyristors
100
Fig. 8 - Thermal Impedance Z
Fig. 7 - On-State Voltage Drop Characteristics
0.01
(Stud Version), 200 A
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
100
Instantaneous On-state Voltage (V)
S quare Wave Pulse Duration (s)
T = 25°C
J
0.1
S T 180S S eries
S T 180S S eries
thJC
T = 125°C
J
Characteristics
5500
5000
4500
4000
3500
3000
2500
2000
Fig. 6 - Maximum Non-Repetitive Surge Current
0.01
Vishay High Power Products
Of Conduction May Not Be Maintained.
Maximum Non Repetitive S urge Current
1
S T 180S S eries
Versus Pulse T rain Duration. Control
Pulse T rain Duration (s)
ST180SPbF Series
No Voltage Reapplied
Rated V
0.1
10
Initial T = 125°C
RR M
Reapplied
J
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