BUK7635-55A /T3 NXP Semiconductors, BUK7635-55A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK7635-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7635-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 62 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 24 ns
• Part # Aliases: BUK7635-55A,118

NXP Semiconductors
BUK7635-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
V
(V)
DSon
GS
10
80
70
60
50
40
30
20
8
6
4
2
0
gate charge; typical values
of drain current; typical values
Gate-source voltage as a function of turn-on
0
0
V
5.5
DD
= 14 V
20
6 6.5 7
10
40
8
V
60
GS
20
(V) = 10
V
9
DD
Q
80
All information provided in this document is subject to legal disclaimers.
= 44 V
G
(nC)
I
D
03nb77
03nb82
(A)
Rev. 02 — 27 January 2011
100
30
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.8
1.2
0.6
5
4
3
2
1
0
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7635-55A
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
(°C)
03aa32
03aa28
180
180
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