BUK7635-55A /T3 NXP Semiconductors, BUK7635-55A /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK7635-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7635-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 62 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 24 ns
• Part # Aliases: BUK7635-55A,118

NXP Semiconductors
BUK7635-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
120
100
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
2
V
GS
4
min
(V) = 12
typ
6
14
4
16
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
18
V
DS
(V)
03nb81
03aa35
(V)
Rev. 02 — 27 January 2011
10
6
20
11
10.5
9.5
8.5
7.5
6.5
5.5
4.5
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
50
45
40
35
30
25
20
16
12
8
4
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
10
20
BUK7635-55A
30
15
© NXP B.V. 2011. All rights reserved.
V
40
GS
I
D
(V)
03nb80
03nb78
(A)
20
50
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