SI4412DY-T1-GE3 Vishay/Siliconix, SI4412DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4412DY-T1-GE3
• Description: MOSFET 30V 7.0A 2.5W 28mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SI4412DY-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 28 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Factory Pack Quantity: 2500
• Part # Aliases: SI4412DY-GE3

Si4412DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
0.01
0.1
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
2
1
30
10
10
1
- 50
0
0.05
0.02
-4
0.2
0.1
Duty Cycle = 0.5
www.vishay.com/ppg?70154.
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
Single Pulse
0
= 150 °C
0.4
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
10
0.6
-3
50
I
D
= 250 µA
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
J
= 25 °C
1.0
100
1.2
125
10
-2
Square Wave Pulse Duration (s)
150
1.4
10
-1
0.10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
2
V
0.10
GS
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
- Gate-to-Source Voltage (V)
Single Pulse Power
DM
JM
- T A
4
t
1
= P DM
Time (s)
S09-0705-Rev. D, 27-Apr-09
t
2
Document Number: 70154
1.00
Z
I
thJA
D
6
thJA
= 7 A
t
t
(t)
1
2
= 50 °C/W
10
8
10.00
30
10