SI4412DY-T1-GE3 Vishay/Siliconix, SI4412DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4412DY-T1-GE3
• Description: MOSFET 30V 7.0A 2.5W 28mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SI4412DY-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 28 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Factory Pack Quantity: 2500
• Part # Aliases: SI4412DY-GE3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70154
S09-0705-Rev. D, 27-Apr-09
0.05
0.04
0.03
0.02
0.01
10
30
24
18
12
8
6
4
2
0
6
0
0
0
0
0
V
I
D
On-Resistance vs. Drain Current
DS
= 2 A
4
V
6
= 15 V
1
V
V
GS
GS
DS
Q
4 V
Output Characteristics
g
= 10 V, 9 V, 8 V, 7 V, 6 V, 5 V
= 4.5 V
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
12
8
2
18
12
3
V
GS
24
16
4
= 10 V
3 V
30
20
5
1500
1200
900
600
300
2.0
1.6
1.2
0.8
0.4
30
24
18
12
0
0
- 50
6
0
0
0
On-Resistance vs. Junction Temperature
- 25
C
I
V
D
rss
GS
C
= 7 A
1
oss
6
= 10 V
V
V
DS
T
GS
Transfer Characteristics
0
J
T
25 °C
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 125 °C
2
Capacitance
25
12
C
50
Vishay Siliconix
iss
3
- 55 °C
18
75
Si4412DY
4
www.vishay.com
100
24
5
125
150
30
6
3