BSS192 /T3 NXP Semiconductors, BSS192 /T3 Datasheet - Page 7
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BSS192 /T3
Manufacturer Part Number
BSS192 /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192_T3.pdf
(12 pages)
Specifications of BSS192 /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Fall Time
18 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
1000 mW
Rise Time
18 ns
Factory Pack Quantity
4000
Part # Aliases
BSS192,135
Philips Semiconductors
PACKAGE OUTLINE
2002 May 22
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
P-channel enhancement mode
vertical D-MOS transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT89
1.6
1.4
A
0.48
0.35
b 1
0.53
0.40
b 2
w
IEC
M
1.8
1.4
b 3
0.44
0.37
1
c
b 1
e
1
TO-243
JEDEC
4.6
4.4
D
0
b 3
D
e
REFERENCES
2
2.6
2.4
E
b 2
3.0
e
SC-62
scale
EIAJ
7
2
3
1.5
e 1
B
A
E
L
4.25
3.75
H E
min.
0.8
4 mm
L
0.13
w
PROJECTION
EUROPEAN
c
H E
Product specification
ISSUE DATE
BSS192
97-02-28
99-09-13
SOT89