BSS192 /T3 NXP Semiconductors, BSS192 /T3 Datasheet - Page 12
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BSS192 /T3
Manufacturer Part Number
BSS192 /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192_T3.pdf
(12 pages)
Specifications of BSS192 /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Fall Time
18 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
1000 mW
Rise Time
18 ns
Factory Pack Quantity
4000
Part # Aliases
BSS192,135
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
613510/03/pp
12
Date of release:
2002 May 22
Fax: +31 40 27 24825
Document order number:
9397 750 09633
SCA74