SUB70N03-09BP-E3 Vishay/Siliconix, SUB70N03-09BP-E3 Datasheet - Page 5

• Manufacturer Part Number: SUB70N03-09BP-E3
• Description: MOSFET 30V 70A 93W
• Manufacturer: Vishay/Siliconix

Specifications of SUB70N03-09BP-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 93 W
• Rise Time: 8 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 ns

Document Number: 71229
S-20102—Rev. B, 11-Mar-02
0.01
0.1
2
1
80
60
40
20
0
0.0001
0
0.1
Duty Cycle = 0.5
0.2
25
Single Pulse
Maximum Drain Current vs.
0.02
0.05
T
50
C
Case Temperature
– Case Temperature (_C)
0.001
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
0.01
150
Square Wave Pulse Duration (sec)
175
New Product
0.1
1000
100
0.1
10
1
0.1
1
V
DS
SUP/SUB70N03-09BP
by r
Single Pulse
Limited
T
– Drain-to-Source Voltage (V)
Safe Operating Area
C
DS(on)
1
= 25_C
10
Vishay Siliconix
10
10 ms
100 ms
1 ms
10 ms
100 ms
dc
www.vishay.com
100
100
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