SUB70N03-09BP-E3 Vishay/Siliconix, SUB70N03-09BP-E3 Datasheet - Page 5
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SUB70N03-09BP-E3
Manufacturer Part Number
SUB70N03-09BP-E3
Description
MOSFET 30V 70A 93W
Manufacturer
Vishay/Siliconix
Datasheet
1.SUB70N03-09BP-E3.pdf
(6 pages)
Specifications of SUB70N03-09BP-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Resistance Drain-source Rds (on)
9 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Fall Time
9 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
93 W
Rise Time
8 ns
Factory Pack Quantity
800
Tradename
TrenchFET
Typical Turn-off Delay Time
25 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUB70N03-09BP-E3
Manufacturer:
VISHAY
Quantity:
11 550
Document Number: 71229
S-20102—Rev. B, 11-Mar-02
0.01
0.1
2
1
80
60
40
20
0
0.0001
0
0.1
Duty Cycle = 0.5
0.2
25
Single Pulse
Maximum Drain Current vs.
0.02
0.05
T
50
C
Case Temperature
– Case Temperature (_C)
0.001
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
0.01
150
Square Wave Pulse Duration (sec)
175
New Product
0.1
1000
100
0.1
10
1
0.1
1
V
DS
SUP/SUB70N03-09BP
by r
Single Pulse
Limited
T
– Drain-to-Source Voltage (V)
Safe Operating Area
C
DS(on)
1
= 25_C
10
Vishay Siliconix
10
10 ms
100 ms
1 ms
10 ms
100 ms
dc
www.vishay.com
100
100
5