SUB70N03-09BP-E3 Vishay/Siliconix, SUB70N03-09BP-E3 Datasheet - Page 4

• Manufacturer Part Number: SUB70N03-09BP-E3
• Description: MOSFET 30V 70A 93W
• Manufacturer: Vishay/Siliconix

Specifications of SUB70N03-09BP-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 93 W
• Rise Time: 8 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 ns

SUP/SUB70N03-09BP
Vishay Siliconix
www.vishay.com
4
2.0
1.6
1.2
0.8
0.4
0.0
45
40
35
30
25
–50
–50
On-Resistance vs. Junction Temperature
V
I
I
–25
–25
D
D
GS
= 30 A
= 250 mA
Drain-Source Voltage Breakdown
= 10 V
T
T
0
0
J
J
vs. Junction Temperature
– Junction Temperature (_C)
– Junction Temperature (_C)
25
25
50
50
75
75
100
100
125
125
_
150
150
175
175
New Product
100
10
1
0
Source-Drain Diode Forward Voltage
T
J
= 150_C
0.3
V
SD
– Source-to-Drain Voltage (V)
0.6
S-20102—Rev. B, 11-Mar-02
T
0.9
J
Document Number: 71229
= 25_C
1.2
1.5