BUK9609-40B /T3 NXP Semiconductors, BUK9609-40B /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK9609-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 95 A
• Resistance Drain-source Rds (on): 0.007 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 89 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 157 W
• Rise Time: 106 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 108 ns
• Part # Aliases: BUK9609-40B,118

NXP Semiconductors
BUK9609-40B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
V
10
DD
= 14 V
20
V
DD
(A)
I
S
100
= 32 V
75
50
25
30
0
0.0
All information provided in this document is subject to legal disclaimers.
Q
G
03nm58
(nC)
40
0.3
Rev. 02 — 7 June 2010
T
j
= 175 ° C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
5000
3750
2500
1250
0.9
0
10
T
as a function of drain-source voltage; typical
values
j
−2
= 25 ° C
V
SD
03nm57
(V)
N-channel TrenchMOS logic level FET
1.2
10
−1
C
C
C
iss
oss
rss
BUK9609-40B
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nm64
(V)
10
2
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