IRF7478TR International Rectifier, IRF7478TR Datasheet - Page 6

• Manufacturer Part Number: IRF7478TR
• Description: MOSFET MOSFET, 60V, 7.6A, 26 mOhm, 21 nC Qg, SO-8
• Manufacturer: International Rectifier

Specifications of IRF7478TR

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 26 mOhms
• Configuration: Single Quad Drain Triple Source
• Package / Case: SOIC-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Typical Turn-off Delay Time: 44 ns

IRF7478
I
A S
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
0.028
0.026
0.024
0.022
0.020
0.018
0.016
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
Current Sampling Resistors
0
.3 F
I
G
V
(B R )D S S
D.U.T.
10
I
D
and Waveforms
and Waveform
V GS = 4.5V
+
-
V
I D , Drain Current (A)
DS
20
V
R G
GS
20V
V D S
30
t p
V
G
Q
I A S
GS
D .U .T
V GS = 10V
0.01
L
40
Charge
Q
Q
GD
G
50
1 5 V
DRIVE R
+
-
60
V D D
A
Fig 13. On-Resistance Vs. Gate Voltage
0.04
0.03
0.02
0.01
400
300
200
100
0
Fig 15c. Maximum Avalanche Energy
25
0.0
Starting T , Junction Temperature ( C)
2.0
V GS, Gate -to -Source Voltage (V)
50
4.0
Vs. Drain Current
J
6.0
75
8.0
I D = 7.0A
100
10.0
www.irf.com
TOP
BOTTOM
12.0
125
14.0
°
1.9A
3.4A
4.2A
I D
16.0
150