IRF7478TR International Rectifier, IRF7478TR Datasheet - Page 2

• Manufacturer Part Number: IRF7478TR
• Description: MOSFET MOSFET, 60V, 7.6A, 26 mOhm, 21 nC Qg, SO-8
• Manufacturer: International Rectifier

Specifications of IRF7478TR

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 26 mOhms
• Configuration: Single Quad Drain Triple Source
• Package / Case: SOIC-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Typical Turn-off Delay Time: 44 ns

Diode Characteristics
IRF7478
Dynamic @ T
Static @ T
Symbol
E
I
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
I
I
AR
SM
d(on)
d(off)
S
rr
DSS
r
f
GSS
V
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
rr
2
g
gs
gd
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Static Drain-to-Source On-Resistance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
Min. Typ. Max. Units
60
17
–––
–––
–––
–––
–––
1740 –––
1590 –––
0.065 –––
–––
–––
–––
–––
–––
––– -100
–––
300
220
410
–––
–––
–––
100
4.3
9.6
7.7
2.6
20
23
21
44
13
37
52
–––
100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
1.3
3.0
2.3
26
30
20
31
78
56
m
V/°C
µA
nA
nC
ns
nC
pF
ns
V
V
S
A
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
Reference to 25°C, I
I
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 4.2A
= 25°C, I
= 25°C, I
= 4.2A
= 6.2
= V
= 48V, V
= 48V, V
= 50V, I
= 48V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 30V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
D
GS
GS
Conditions
Conditions
= 4.2A, V
= 4.2A
= 250µA
= 4.2A
= 4.2A
= 3.5A
= 0V to 48V
Max.
= 1.0V, ƒ = 1.0MHz
= 48V, ƒ = 1.0MHz
140
= 0V
= 0V, T
4.2
D
www.irf.com
= 1mA
GS
J
= 125°C
G
= 0V
Units
mJ
A
S
D