IRF7478TR International Rectifier, IRF7478TR Datasheet

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IRF7478TR

Manufacturer Part Number
IRF7478TR
Description
MOSFET MOSFET, 60V, 7.6A, 26 mOhm, 21 nC Qg, SO-8
Manufacturer
International Rectifier
Datasheet

Specifications of IRF7478TR

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Resistance Drain-source Rds (on)
26 mOhms
Configuration
Single Quad Drain Triple Source
Package / Case
SOIC-8
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Typical Turn-off Delay Time
44 ns

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7478TRPBF
Manufacturer:
International Rectifier
Quantity:
40 955
Part Number:
IRF7478TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
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Benefits
Thermal Resistance
Applications
Absolute Maximum Ratings
www.irf.com
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
Notes
D
D
DM
J
STG
D
GS
@ T
@ T
JL
JA
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design, (See
are on page 8
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
60V
DSS
1
2
3
4
T o p V ie w
Typ.
300 (1.6mm from case )
–––
–––
R
HEXFET
DS(on)
8
7
6
5
-55 to + 150
30@V
26@V
Max.
0.02
± 20
7.0
5.6
2.5
3.7
56
D
D
D
D
A
A
GS
max (m
GS
®
= 4.5V
= 10V
Power MOSFET
Max.
20
50
IRF7478
SO-8
PD- 94055A
3.5A
4.2A
I
Units
Units
D
W/°C
°C/W
V/ns
°C
W
A
V
1
3/13/01

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IRF7478TR Summary of contents

Page 1

Applications High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter I ...

Page 2

IRF7478 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T J ...

Page 4

IRF7478 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

IRF7478 0.028 0.026 0.024 4.5V 0.022 0.020 0.018 0.016 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V ...

Page 7

SO-8 Package Details (. ...

Page 8

IRF7478 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO ...

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