PSMN017-30BL,118 NXP Semiconductors, PSMN017-30BL,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN017-30BL,118
• Description: MOSFET N-chan 30 V 17 mohm MOSFET in D2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30BL,118

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 17 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 47 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN017-30BL
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
(pF)
1000
DSon
C
800
600
400
200
40
30
20
10
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
Drain-source on-state resistance as a function
0
0
4
3
6
8
12
9
All information provided in this document is subject to legal disclaimers.
003aaj532
V
003aaj458
V
GS
GS
C
C
(V)
rss
iss
(V)
12
16
Rev. 2 — 3 April 2012
N-channel 30 V 17 mΩ logic level MOSFET in D2PAK
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S)
g
10
10
10
10
10
10
(A)
fs
I
30
20
10
D
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
min
10
1
PSMN017-30BL
20
typ
2
© NXP B.V. 2012. All rights reserved.
V
GS
003aaj417
003aab271
I
D
max
(A)
(V)
30
3
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