PSMN017-30BL,118 NXP Semiconductors, PSMN017-30BL,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN017-30BL,118
• Description: MOSFET N-chan 30 V 17 mohm MOSFET in D2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30BL,118

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 17 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 47 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN017-30BL
Product data sheet
Fig 1.
Fig 3.
10
(A)
(A)
10
10
I
I
D
D
10
40
30
20
10
-1
3
2
1
0
10
mounting base temperature
(1) Capped at 32A due to package
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
100
Limit R
150
All information provided in this document is subject to legal disclaimers.
DSon
T
003aaj442
mb
1
= V
(°C)
DS
200
/ I
Rev. 2 — 3 April 2012
D
N-channel 30 V 17 mΩ logic level MOSFET in D2PAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
DC
50
PSMN017-30BL
100
V
DS
(V)
t
100 μ s
100 ms
10 ms
p
1 ms
=10 μ s
150
© NXP B.V. 2012. All rights reserved.
T
003aaj594
mb
03aa16
(°C)
10
200
2
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