TP2640LG-G Supertex, TP2640LG-G Datasheet

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TP2640LG-G

Manufacturer Part Number
TP2640LG-G
Description
MOSFET 400V 15Ohm
Manufacturer
Supertex
Datasheet

Specifications of TP2640LG-G

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 210 mA
Resistance Drain-source Rds (on)
15 Ohms
Configuration
Single Quad Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Fall Time
15 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.3 W
Rise Time
15 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
60 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP2640LG-G
Manufacturer:
SUPERTEX
Quantity:
20 000
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Distance of 1.6mm from case for 10 seconds.
Low threshold (-2.0V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TP2635
Device
Package Option
TP2635N3-G
TO-92
P-Channel Enhancement-Mode
Vertical DMOS FET
1235 Bordeaux Drive, Sunnyvale, CA 94089
-55°C to +150°C
BV
DSS
(max)
-350
(V)
+300°C
/BV
Value
BV
BV
±20V
DGS
DGS
DSS
1
Package may or may not include the following marks: Si or
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Pin Configuration
Product Marking
R
(max)
DS(ON)
(Ω)
15
Y Y W W
2 6 3 5
SiT P
Tel: 408-222-8888
SOURCE
YY = Year Sealed
WW = Week Sealed
TO-92 (N3)
TO-92 (N3)
V
(max)
-2.0
GS(th)
(V)
= “Green” Packaging
www.supertex.com
DRAIN
GATE
TP2635
I
(min)
-0.7
D(ON)
(A)

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TP2640LG-G Summary of contents

Page 1

... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...

Page 2

... -300mA 25Ω GEN GEN D.U.T. Output INPUT ● Tel: 408-222-8888 ● www.supertex.com TP2635 I DRM (A) -0.8 = -2.0mA D = -1.0mA D = -1.0mA -100V DS = Max rating DS = 125 -25V DS = -20mA D = -150mA D = -300mA D = -300mA D = -300mA D ...

Page 3

... Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics -1.0 -8V -6V -0 -10V GS -4V -0.6 -0.4 -3V -0 (volts) DS Power Dissipation vs. Temperature 2.0 1.6 1.2 TO-92 0.8 0 100 125 T ° Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 1.0W 0 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com TP2635 -10 150 10 ...

Page 4

... On-Resistance vs. Drain Current V = -2. -4. -10V -0.4 -0.8 -1.2 -1.6 I (amperes and R Variation with Temperature -1mA (th -10V, -0.3A DS(ON) - 100 T ° Gate Drive Dynamic Characteristics 678pF V = -10V -40V DS 263pF (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TP2635 -2.0 2.5 2.0 1.5 1.0 0.5 0 150 5 ...

Page 5

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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