BUJ403A/DG,127 NXP Semiconductors, BUJ403A/DG,127 Datasheet - Page 6
BUJ403A/DG,127
Manufacturer Part Number
BUJ403A/DG,127
Description
MOSFET NPN POWER TRANSISTOR
Manufacturer
NXP Semiconductors
Datasheet
1.BUJ403ADG127.pdf
(9 pages)
Specifications of BUJ403A/DG,127
Rohs
yes
Factory Pack Quantity
50
NXP Semiconductors
December 1998
Silicon Diffused Power Transistor
Fig.13. Reverse bias safe operating area T
IC (A)
11
10
9
8
7
6
5
4
3
2
1
0
0
200
400
VCEclamp (V)
600
800
1,000
1,200
1,400
j
≤ T
jmax
5
Fig.14. Test Circuit for reverse bias safe operating
V
cl
-VBB
≤ 1000V; V
IBon
cc
= 150V; V
LB
200 µ H
area
BB
= -5V;L
LC
Product specification
VCC
B
T.U.T.
= 1 µ H; L
BUJ403A
Rev 1.200
VCL
c
=