BUJ403A/DG,127 NXP Semiconductors, BUJ403A/DG,127 Datasheet

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BUJ403A/DG,127

Manufacturer Part Number
BUJ403A/DG,127
Description
MOSFET NPN POWER TRANSISTOR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUJ403A/DG,127

Rohs
yes
Factory Pack Quantity
50
DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ403A
Silicon Diffused Power Transistor
Product specification
December 1998

Related parts for BUJ403A/DG,127

BUJ403A/DG,127 Summary of contents

Page 1

DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification DISCRETE SEMICONDUCTORS December 1998 ...

Page 2

... NXP Semiconductors Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER V Collector-emitter voltage peak value ...

Page 3

... NXP Semiconductors Silicon Diffused Power Transistor STATIC CHARACTERISTICS ˚C unless otherwise specified mb SYMBOL PARAMETER I ,I Collector cut-off current CES CBO I CES I Collector cut-off current CEO I Emitter cut-off current EBO V Collector-emitter sustaining voltage CEOsust V Collector-emitter saturation voltage CEsat V Base-emitter saturation voltage ...

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... NXP Semiconductors Silicon Diffused Power Transistor 300R 6V 30-60 Hz Fig.1. Test circuit for 250 200 100 0 VCE / V Fig.2. Oscilloscope display for V VIM Fig .3. Test circuit resistive load 250 µ s; δ and R calculated from I and ...

Page 5

... NXP Semiconductors Silicon Diffused Power Transistor Normalised Power Derating PD% 120 110 100 Tmb / C Fig.7. Normalised power dissipation. PD% = 100 ⋅ PD/PD 25˚ 100 0.01 0 Fig.8. Typical DC current gain. h parameter V CE VCEsat/V 2.0 1.6 IC=1A 2A IC=1A 3A 1.2 0.8 0.4 0.0 0.01 0.10 IB/A Fig.9. Collector-Emitter saturation voltage. ...

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... NXP Semiconductors Silicon Diffused Power Transistor IC ( 200 400 600 800 VCEclamp (V) Fig.13. Reverse bias safe operating area T December 1998 IBon -VBB 1,000 1,200 1,400 ≤ T Fig.14. Test Circuit for reverse bias safe operating j jmax V ≤ ...

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... NXP Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.15. TO220AB; pin 2 connected to mounting base. ...

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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

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... Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www ...

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