IPB107N20NAXT Infineon Technologies, IPB107N20NAXT Datasheet - Page 7

• Manufacturer Part Number: IPB107N20NAXT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB107N20NAXT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 11 ns
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 ns
• Typical Turn-off Delay Time: 41 ns
• Part # Aliases: IPB107N20NA IPB107N20NAATMA1

Rev. 2.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
1
230
220
210
200
190
180
AV
=f(T
); R
1
-60
j
GS
); I
j(start)
=25 W
D
-20
=1 mA
10
20
t
AV
T
j
[µs]
60
[°C]
125 °C
100 °C
100
100
25 °C
140
180
1000
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
gs(th)
GS
gate
0
); I
DD
Q
D
=44 A pulsed
gs
IPB107N20NA
20
40 V
Q
Q
gate
g
Q
40
sw
[nC]
100 V
Q
gd
IPP110N20NA
160 V
60
2011-05-11
Q
gate
80