IPB107N20NAXT Infineon Technologies, IPB107N20NAXT Datasheet - Page 5

• Manufacturer Part Number: IPB107N20NAXT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB107N20NAXT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 11 ns
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 ns
• Typical Turn-off Delay Time: 41 ns
• Part # Aliases: IPB107N20NA IPB107N20NAATMA1

Rev. 2.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
200
175
150
125
100
75
50
25
200
180
160
140
120
100
DS
0
GS
80
60
40
20
0
); T
); |V
0
0
j
=25 °C
DS
j
GS
|>2|I
1
D
2
|R
DS(on)max
10 V
7 V
175 °C
2
V
V
DS
GS
[V]
4
[V]
25 °C
3
4.5 V
5 V
6
4
5
page 5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
20
15
10
180
160
140
120
100
D
=f(I
5
0
80
60
40
20
); T
0
0
D
0
j
); T
=25 °C
GS
20
j
=25 °C
25
IPB107N20NA
40
4.5 V
50
60
I
I
D
D
75
[A]
5 V
[A]
80
100
IPP110N20NA
7 V
100
125
10 V
120
2011-05-11
150
140