ALD212900SAL Advanced Linear Devices, ALD212900SAL Datasheet - Page 3

• Manufacturer Part Number: ALD212900SAL
• Description: MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
• Manufacturer: Advanced Linear Devices

Specifications of ALD212900SAL

• Rohs: yes

ALD2108xx/ALD2148xx/ALD2129xx/ALD2169xx high precision
monolithic quad/dual N-Channel MOSFET arrays are enhanced
versions of the ALD1108xx/ALD1109xx EPAD
increased forward transconductance and output conductance, in-
tended for operation at very low power supply voltages. These de-
vices are also capable of sub-threshold operation with <1nA of op-
erating supply currents and at the same time delivering higher out-
put drive currents (typ. >50mA). They feature precision Gate Off-
set Voltages, V
MOSFET pairs M1 and M2 or M3 and M4.
ALD's Electrically Programmable Analog Device (EPAD
ogy provides the industry's only family of matched MOSFET tran-
sistors with a range of precision gate-threshold voltage values. All
members of this family are designed and actively programmed for
exceptional matching of device electrical and temperature charac-
teristics. Gate Threshold Voltage V
Depletion Mode to +3.50V Enhancement Mode devices, including
standard products with V
+0.00V, +0.20V, +0.40V, +0.80V, +1.40V, and +3.30V. ALD can
also provide any customer desired V
+3.50V on a special order basis. For all these devices ALD EPAD
technology enables excellent well-controlled gate threshold volt-
age, subthreshold voltage, and low leakage characteristics. With
well matched design and precision programming, units from differ-
ent production lots provide the user with exceptional matching and
uniformity characteristics. Built on the same monolithic IC chip, the
units also have excellent temperature tracking characteristics.
This ALD2108xx/ALD2148xx/ALD2129xx/ALD2169xx EPAD
MOSFET Array product family (EPAD MOSFET) is available in three
separate categories, each providing a distinctly different set of elec-
trical specifications and characteristics. The first category is the
ALD210800A/ALD210800/ALD212900A/ALD212900 Zero-Thresh-
old™ mode EPAD MOSFETs. The second is the ALD2108xx/
ALD2129xx enhancement mode EPAD MOSFETs. The third cat-
egory includes the ALD2148xx/ALD2169xx depletion mode EPAD
MOSFETs. (The suffix “xx” denotes threshold voltage in 0.1V steps,
for example, xx=08 denotes 0.80V). For each device, there is a
zero-tempco bias current and bias voltage point. When a design
utilizes such a feature, then the gate-threshold voltage is tempera-
ture stable, greatly simplifying certain designs where stability of
certain circuit parameters over a temperature range is desired.
ALD210800A/ALD210800 (quad) and ALD212900A/ALD212900
(dual) EPAD MOSFETs are Zero Threshold MOSFET transistors in
which the individual gate-threshold voltage of each MOSFET is set
at zero, defined as V
= +0.1V. Zero Threshold MOSFETs operate in the enhancement
region when operated above threshold voltage (V
I
threshold voltage (V
along with other low V
ultra low supply voltage analog or digital operation and nanopower
circuit designs, thereby reducing or eliminating the use of very high
valued (expensive) resistors in many cases.
The ALD2108xx/ALD2129xx (quad/dual) product family features
precision matched enhancement mode EPAD MOSFET devices,
which require a positive gate bias voltage V
V
offered. No conductive channel exists between the source and drain
at zero applied gate voltage (VGS = 0.00V) for +3.30V, +1.40V and
+0.80V versions. The +0.40V and the +0.20V versions have a sub-
threshold current at about 1nA and 100nA for the ALD2108xx (2nA
and 200nA for the ALD2129xx) respectively at zero applied gate
voltage. They are also capable of delivering lower R
higher output currents greater than 68mA (see specifications).
ALD212900/ALD212900A
DS
GS(th)
> 10µA) and subthreshold region when operated at or below
values at +3.30V, +1.40V, +0.80V, +0.40V and +0.20V are
OS
, defined as the difference in V
GS
GS(th)
GS(th)
<= 0.00V and IDS < 10µA). These devices,
GS(th)
= 0.00V at I
members of the product family, enable
specified at -3.50V, -1.30V, -0.40V,
PERFORMANCE CHARACTERISTICS OF EPAD
GS(th)
PRECISION MATCHED PAIR MOSFET FAMILY
GS(th)
DS(ON)
values range from -3.50V
GS
®
between -3.50V and
MOSFET family, with
to turn on. Precision
= 10µA @ V
GS
GS(th)
> 0.00V and
DS(ON)
®
) technol-
between
Advanced Linear Devices
DS(ON)
and
The ALD2148xx/ALD2169xx (quad/dual) features Depletion Mode
EPAD MOSFETs, which are normally-on devices at zero applied
gate voltage. The V
V
supply voltage and/or with V
MOSFET device is already turned on and exhibits a defined and
controlled on-resistance R
turned off when a negative voltage is applied to V- pin and V
more negative than its V
MOSFETs are different from most other depletion mode MOSFETs
and JFETs in that they do not exhibit high gate leakage currents
and channel/junction leakage currents, while they stay controlled,
modulated and turned off at precise voltages. The same MOSFET
device equations as those for enhancement mode devices apply.
KEY APPLICATION ENVIRONMENTS
EPAD MOSFETs are ideal for circuits requiring low V
operating currents with tracked differential thermal responses. They
feature low input bias currents (less than 200pA max.), low input
capacitance and fast switching speed. These and other operating
characteristics offer unique solutions in one or more of the follow-
ing operating environments:
ELECTRICAL CHARACTERISTICS
The turn-on and turn-off electrical characteristics of the EPAD
MOSFET products are shown in the I
I
characteristics as a function of V
under different bias conditions, while I
voltage is controlled and predictable. A series of four graphs titled
“Forward Transfer Characteristics”, with the second and third sub-
titled “expanded (subthreshold)” and “further expanded (subthresh-
old)”, and the fourth sub-titled “low voltage”, illustrates the wide
dynamic operating range of these devices.
Classic MOSFET equations for an N-channel MOSFET also apply
to EPAD MOSFETs. The drain current in the linear region (V
< V
I
where:
In this region of operation the I
V
trolled resistor.
For higher values of V
the saturation current I
IDS(ON)
DS(ON)
DS(ON)
* Low supply voltage: 0.1V to 10V or + 0.05V to + 5V
* Ultra low supply voltage: less than + 10mV to + 0.1V
* Nanopower operation: voltage x current = nW or uW
* Precision V
* Matching and tracking of multiple MOSFETs
* Matching across multiple packages
S
DS(ON)
and V
GS
- V
vs. V
= u . C
= u . C
GS
value and the device can be used as a gate-voltage con-
V
GS(th)
V
DS(ON)
GS(th)
>V-) at which the EPAD MOSFET turns off. Without a
GS
C
V
OS
OX
OX
GS
OX
) is given by:
W = Channel width
graphs. Each graph shows I
u = Mobility
L = Channel length
characteristics
. W/L . [V
. W/L . [V
= Gate Threshold (Turn-on)Voltage
= Drain to Source On Voltage
GS(th)
= Gate to Source Voltage
= Capacitance / unit area of Gate electrode
DS(ON)
DS(ON)
is set at a negative voltage level (V
GS(th)
DS(ON)
GS
GS
GS
®
is now given by (approx.):
DS(ON)
where V
- V
- V
= V- = 0.00V = Ground, the EPAD
. These Depletion Mode EPAD
GS
GS(th)
GS(th)
. An EPAD MOSFET may be
in a different operating region
DS(ON)
value is proportional to the
DS(ON)
DS(ON)
]
2
- V
DS(ON)
DS
at a given gate input
/2] . V
>= V
vs. V
versus V
GS
DS(ON)
DS(ON)
OS
- V
and low
3 of 12
DS(ON)
DS(ON)
GS
GS(th)
GS
and
set
<
,