ALD212900SAL Advanced Linear Devices, ALD212900SAL Datasheet - Page 2

• Manufacturer Part Number: ALD212900SAL
• Description: MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
• Manufacturer: Advanced Linear Devices

Specifications of ALD212900SAL

• Rohs: yes

OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V - = GND T A = 25
ABSOLUTE MAXIMUM RATINGS
ALD212900/ALD212900A
Parameter
Notes:
Gate Threshold Voltage
Offset Voltage
Offset Voltage Tempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Drain-Source voltage, V DS
Gate-Source voltage, V GS
Operating Current
Power dissipation
Operating temperature range SAL, PAL
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
1
Consists of junction leakage currents
1
1
V GS(th)
V OS
TC VOS
TC VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
R DS (ON)
∆R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
Symbol
°
C unless otherwise specified
-0.01
Min
10
ALD212900A
+0.6
0.00
1.18
Typ
-1.7
0.0
1.8
2.3
1.8
0.6
Advanced Linear Devices
79
85
38
14
10
30
10
10
60
1
5
5
5
2
0.01
Max
400
200
2
4
1
-0.02
Min
10
ALD212900
0.00
+1.6
1.18
-1.7
Typ
0.0
1.8
2.3
1.8
0.6
79
85
38
14
10
30
10
10
60
2
5
5
5
2
Max
0.02
400
200
10
4
1
Unit
V
mV
µV/°C
mV/°C
mA
µA
mmho
%
Ω
KΩ
%
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
mmho
-65°C to +150°C
0°C to +70°C
I DS =20µA, V DS = 0.1V
V GS(th)1 -V GS(th)2
V DS1 = V DS2
I D = 20µA, V DS = 0.1 V
I D = 760 uA, V DS = 0.1V
I D = 1.5 mA, V GS = 0.1 V
V GS = +3.0V, V DS = +3V
V GS = +0.1V, V DS = +0.1V
V GS = +3.0V
V DS = +3.0V
V GS = +3.0V
V DS = +3.0V
V GS = +5.0V
V DS = +0.1V
V GS = +0.0V, V DS = +0.1V
V GS = +0.1V, V DS = +0.1V
V DS = +0.1V
V GS = +5.0V
V - = V GS = -1.0V
I DS = 10µA
V GS = -1.0V, V DS =+5V
V - = -5V
T A = 125°C
V GS = +5V, V DS = 0V
T A =125°C
V + = 5V, R L = 5KΩ
V + = 5V, R L = 5KΩ
f = 100KHz
Test Conditions
500 mW
+260°C
80 mA
10.6V
10.6V
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