ALD212900SAL Advanced Linear Devices, ALD212900SAL Datasheet

ALD212900SAL

Manufacturer Part Number

ALD212900SAL

Description

MOSFET Dual N-Ch EPAD FET Array VGS=0.0V

Manufacturer

Advanced Linear Devices

Datasheet

1.ALD212900PAL.pdf (12 pages)

Specifications of ALD212900SAL

Rohs

yes

Current page: 1 of 12
Download datasheet (107Kb)

ORDERING INFORMATION

GENERAL DESCRIPTION

ALD212900A/ALD212900 precision N-Channel EPAD

sion matched at the factory using ALD’s proven EPAD

dual monolithic devices are enhanced additions to the ALD110900A/ALD110900

EPAD

conductance, particularly at very low supply voltages.

Intended for low voltage, low power small signal applications, the ALD212900A/

ALD212900 features Zero-Threshold™ voltage, which enables circuit designs

with input/output signals referenced to GND at enhanced operating voltage

ranges. With these devices, a circuit with multiple cascading stages can be

built to operate at extremely low supply/bias voltage levels. For example, a

nanopower input amplifier stage operating at <0.2V supply voltage has been

successfully built with these devices.

ALD212900A/ALD212900 EPAD MOSFETs feature exceptional matched pair

device electrical characteristics of Gate Threshold Voltage V

at +0.00V + 0.01V, I

only +/- 0.001V (1mV). Built on a single monolithic chip, they also exhibit excel-

lent temperature tracking characteristics. These precision devices are versatile

as design components for a broad range of analog small signal applications

such as basic building blocks for current mirrors, matching circuits, current

sources, differential amplifier input stages, transmission gates, and multiplex-

ers. They also excel in limited operating voltage applications, such as very low

level voltage-clamps and nano-power normally-on circuits.

In addition to precision matched-pair electrical characteristics, each individual

EPAD MOSFET also exhibits well controlled manufacturing characteristics, en-

abling the user to depend on tight design limits from different production batches.

These devices are built for minimum offset voltage and differential thermal re-

sponse, and they can be used for switching and amplifying applications in +0.1V

to +10V (+/- 0.05V to +/- 5V) powered systems where low input bias current, low

input capacitance, and fast switching speed are desired. At V

device exhibits enhancement mode characteristics whereas at V

device operates in the subthreshold voltage region and exhibits conventional

depletion mode characteristics, with well controlled turn-off and sub-threshold

levels that operate the same as standard enhancement mode MOSFETs.

ALD212900A/ALD212900 features high input impedance (2.5 x 10

DC current gain (>10

output current of 30mA and input current of 300pA at 25°C is 30mA/300pA =

100,000,000, which translates into a dynamic operating current range of about

eight orders of magnitude. A series of four graphs titled “Forward Transfer Char-

acteristic”, with sub-titles of second “expanded (subthreshold)”, third “further

expanded (subthreshold)” and fourth “Low Voltage” illustrates the unique wide

dynamic operating range of these devices.

Generally it is recommended that the V+ pin be connected to the most positive

voltage and the V- and IC (internally-connected) pins to the most negative volt-

age in the system. All other pins must have voltages within these voltage limits

at all times. Standard ESD protection facilities and handling procedures for static

sensitive devices are highly recommended when using these devices.

* Contact factory for industrial temp. range or user-specified threshold voltage values.

MOSFET Family, with increased forward transconductance and output

8-Pin SOIC

Package

ALD212900ASAL

ALD212900SAL

INEAR

DVANCED

EVICES,

Operating Temperature Range*

). A sample calculation of the DC current gain at a drain

= +20µA @ V

0°C to +70°C

NC.

(“L” suffix

PRECISION N-CHANNEL EPAD

DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR

8-Pin Plastic Dip

Package

ALD212900APAL

ALD212900PAL

denotes lead-free (RoHS))

= 0.1V, with a typical offset voltage of

CMOS technology. These

MOSFET array is preci-

GS(th)

set precisely

> 0.00V, the

Ω) and high

<0.00V the

www.aldinc.com

MOSFET ARRAY

FEATURES & BENEFITS

• Zero Threshold™ V

• V

• Sub-threshold voltage ( nano-power) operation

• < 100 mV Min. operating voltage

• < 1 nA Min. operating current

• < 1 nW Min. operating power

• > 100,000,000:1 operating current ranges

• High transconductance and output conductance

• Low R

• Output current > 50 mA

• Matched and tracked tempco

• Tight lot-to-lot parametric control

• Positive, zero, and negative V

• Low input capacitance and leakage currents

PIN CONFIGURATION

APPLICATIONS

• Low overhead current mirrors and current sources

• Zero Power Normally-On circuits

• Energy harvesting circuits

• Very low voltage analog and digital circuits

• Zero power fail-safe circuits

• Backup battery circuits & power failure detector

• Extremely low level voltage-clamps

• Extremely low level zero-crossing detector

• Matched source followers and buffers

• Precision current mirrors and current sources

• Matched capacitive probes and sensor interfaces

• Charge detectors and charge integrators

• High gain differential amplifier input stage

• Matched peak-detectors and level-shifters

• Multiple Channel Sample-and-Hold switches

• Precision Current multipliers

• Discrete matched analog switches / multiplexers

• Nanopower discrete voltage comparators

IC*

DS(ON)

*IC pins are internally connected, connect to V-

GS(th)

V -

match) to 2mV / 10mV max.

of 14Ω

SAL, PAL PACKAGES

ALD212900/ALD212900A

ALD212900

M 1

GS(th)

V GS(th) = +0.00V

= 0.00 V +/-0.01V

M 2

GS(th)

V -

tempco

1 of 12

EPAD

V -

V +

Related parts for ALD212900SAL

ALD212900SAL Summary of contents

Page 1

... Operating Temperature Range* 0°C to +70°C 8-Pin SOIC 8-Pin Plastic Dip Package Package ALD212900ASAL ALD212900APAL ALD212900SAL ALD212900PAL * Contact factory for industrial temp. range or user-specified threshold voltage values. ©2013 Advanced Linear Devices, Inc., Vers. 1.0 ® MOSFET array is preci- ® CMOS technology. These ...

Page 2

... Advanced Linear Devices 10.6V 10. 500 mW 0°C to +70°C -65°C to +150°C +260°C Typ Max Unit Test Conditions 0. =20µ 0. GS(th)1 -V GS(th)2 5 µV/°C V DS1 = V DS2 -1.7 mV/° 20µ ...

Page 3

... V to turn on. Precision DS(ON) GS trolled resistor. For higher values of V the saturation current I IDS(ON) and DS(ON) Advanced Linear Devices ® is set at a negative voltage level (V GS(th) >V-) at which the EPAD MOSFET turns off. Without 0.00V = Ground, the EPAD EPAD MOSFET may be DS(ON) . These Depletion Mode EPAD ...

Page 4

... V- and V+. This way internally back biased diodes are never allowed to become forward biased, possi- bly causing damage to the device. Standard ESD control procedures should be observed so that static charge does not degrade the performance of the devices. Advanced Linear Devices causes the subthreshold I-V curves GS . GS(th 10µ ...

Page 5

... V GS= V GS(th) +3.0V V GS= V GS(th) +2.5V V GS= V GS(th) +2.0V V GS= V GS(th) +1.5V V GS= V GS(th) +1.0V V GS= V GS(th) +0. 1000000.00 100000.00 V GS(th) = 0.0V V GS(th) = +0.2V V GS(th) = +0.4V V GS(th) = +0.8V V GS(th) = +1. 1000000.00 100000.00 +0.1 +0.2 +0.3 +0.4 +0.5 Advanced Linear Devices LOW VOLTAGE OUTPUT CHARACTERISTICS -10 -20 -30 -40 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 DRAIN SOURCE ON VOLTAGE - V DS(ON) (V) FORWARD TRANSFER CHARACTERISTICS EXPANDED (SUBTHRESHOLD 25°C 10000 ...

Page 6

... AMBIENT TEMPERATURE - T A (°C) ALD212900/ALD212900A GS(th 3.0V +125 +50 +75 +100 0 +1.0 +2.0 +3 GS(th 3.0V +50 +75 +100 +125 Advanced Linear Devices HIGH LEVEL OUTPUT CONDUCTANCE vs. GATE THRESHOLD VOLTAGE 2. 25°C 2.50 2.25 2. GS(th 3.0V 1.75 1.50 -4.0 -3.0 -2.0 -1.0 0.0 +1.0 GATE THRESHOLD VOLTAGE - V GS(th) (V) HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE 3 ...

Page 7

... GS(th -55°C +125°C +70°C 0° +25°C 0°C - 55° Advanced Linear Devices ZERO TEMPERATURE COEFFICIENT (ZTC) 1000 0.1V 800 600 +125°C 400 +25°C Zero Temperature Coefficient (ZTC) 200 - 55° +0.1 +0.2 +0.3 GATE SOURCE OVERDRIVE VOLTAGE ...

Page 8

... DRAIN OFF LEAKAGE CURRENT I DS(OFF) vs. AMBIENT TEMPERATURE 600 500 400 300 200 100 0 -50 0 +25 -25 AMBIENT TEMPERATURE - T A (°C) ALD212900/ALD212900A I DS(OFF) +50 +75 +100 +125 Advanced Linear Devices OFFSET VOLTAGE vs. AMBIENT TEMPERATURE +10 +8 REPRESENTATIVE UNITS GS(th GS(th -10 -50 -25 0 +25 ...

Page 9

... V 1/2 ALD1105, DS 1/2 ALD1107, or 1/2 ALD3107xx Package OUT - M3, M4: ALD1102, ALD1117, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1107, or 1/2 ALD3107xx Advanced Linear Devices CURRENT SOURCE WITH GATE CONTROL + SET SET ON I SOURCE M 1 OFF M1: M3, M4: 1/2 ALD1101, ALD1102, 1/2 ALD1116, ALD1117, 1/2 ALD1109xx, 1/2 ALD1103, ...

Page 10

... ALD1105, 1/2 ALD1106, 1/2 ALD1108xx, or 1/2 ALD2108xx CASCODE CURRENT SOURCES + SET SET M3, M4: ALD1101, ALD1116, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1106, or 1/2 ALD2108xx Advanced Linear Devices P- CHANNEL CURRENT SOURCE + SET SET SOURCE M3, M4: ALD1102, ALD1117, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1107, or ...

Page 11

... S (45° (45° ALD212900/ALD212900A SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Dim D ø ø Advanced Linear Devices Millimeters Min Max Min 1.75 0.053 1.35 0.25 0.004 0.10 0.45 0.014 0.35 0.25 0.007 0.18 5.00 0.185 4.69 4.05 0.140 3.50 1.27 BSC 0.050 BSC 6.30 0.224 5.70 0.937 ...

Page 12

... ALD212900/ALD212900A PDIP-8 PACKAGE DRAWING 8 Pin Plastic DIP Package Dim D S-8 ø Advanced Linear Devices Millimeters Min Max Min 3.81 5.08 0.105 0.38 1.27 0.015 2.03 0.050 1.27 0.89 1.65 0.035 0.38 0.51 0.015 0.20 0.30 0.008 9.40 11.68 0.370 7.11 0.220 5.59 7.62 8.26 0.300 2.29 2.79 0.090 7 ...

Related keywords

ALD212900SAL datasheet
ALD212900SAL data sheet
ALD212900SAL pdf datasheet
ALD212900SAL component
ALD212900SAL part
ALD212900SAL distributor
ALD212900SAL RoHS
ALD212900SAL datasheet download