PSMN6R0-30YLB,115 NXP Semiconductors, PSMN6R0-30YLB,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN6R0-30YLB,115
• Description: MOSFET N-CH 30 V 6.5 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-30YLB,115

• Rohs: yes
• Factory Pack Quantity: 1500

NXP Semiconductors
Table 6.
PSMN6R0-30YLB
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
4.5
3.5
1
N-channel 30 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology
…continued
2
V
3
GS
All information provided in this document is subject to legal disclaimers.
003aag094
V
(V) = 3.0
DS
(V)
2.6
2.4
2.2
2.8
Conditions
V
T
I
see
I
V
V
dI
see
S
S
Rev. 2 — 24 October 2011
j
GS
GS
GS
4
S
= 25 °C
= 20 A; V
= 20 A; dI
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 20 A;
= 0 V; T
Fig 7.
= 15 V; f = 1 MHz;
= 15 V
R
(m Ω )
DSon
DS
25
20
15
10
5
0
j
of gate-source voltage; typical values
= 15 V;
Drain-source on-state resistance as a function
= 25 °C;
0
5
PSMN6R0-30YLB
Min
-
-
-
-
-
-
10
Typ
7.2
0.85
25.5
15
15.9
9.6
15
© NXP B.V. 2011. All rights reserved.
003aag095
V
GS
-
-
Max
-
1.1
-
-
(V)
20
Unit
nC
V
ns
nC
ns
ns
7 of 15