SIHP12N60E-GE3 Vishay/Siliconix, SIHP12N60E-GE3 Datasheet - Page 7
SIHP12N60E-GE3
Manufacturer Part Number
SIHP12N60E-GE3
Description
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHP12N60E-E3.pdf
(8 pages)
Specifications of SIHP12N60E-GE3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
12 A
Resistance Drain-source Rds (on)
380 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB-3
Minimum Operating Temperature
- 55 C
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIHP12N60E-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Revison: 08-Oct-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
e(1)
E
2
e
3
b
M
b(1)
*
Ø P
For technical questions, contact:
C
A
J(1)
F
TO-220AB
1
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
• Xi’an and Mingxin actual photo
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
DIM.
hvm@vishay.com
H(1)
b(1)
e(1)
J(1)
L(1)
Ø P
A
D
E
Q
b
c
e
F
L
www.vishay.com/doc?91000
14.85
10.04
13.35
MIN.
4.25
0.69
1.20
0.36
2.41
4.88
1.14
6.09
3.32
3.54
2.60
2.41
MILLIMETERS
Package Information
MAX.
15.49
10.51
14.02
4.65
1.01
1.73
0.61
2.67
5.28
1.40
6.48
2.92
3.82
3.94
3.00
Vishay Siliconix
Document Number: 71195
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
MIN.
INCHES
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118