SIHP12N60E-GE3 Vishay/Siliconix, SIHP12N60E-GE3 Datasheet - Page 2

• Manufacturer Part Number: SIHP12N60E-GE3
• Description: MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHP12N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 380 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Minimum Operating Temperature: - 55 C

Notes
a. C
b. C
S12-0646-Rev. C, 26-Mar-12
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related
Effective Output Capacitance, Time
Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
DS
oss(er)
oss(tr)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Temperature Coefficient
a
b
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same energy as C
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
= 25 °C, unless otherwise noted)
For technical questions, contact:
SYMBOL
SYMBOL
V
R
V
R
C
R
C
t
t
I
I
C
V
I
C
C
Q
V
GS(th)
DS(on)
Q
d(on)
d(off)
I
RRM
GSS
DSS
g
Q
Q
DS
R
SM
t
thJA
thJC
o(er)
I
o(tr)
t
t
DS
oss
SD
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
g
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
oss
V
GS
GS
DS
while V
Reference to 25 °C, I
V
T
= 10 V
= 10 V
2
DS
J
= 480 V, V
dI/dt = 100 A/μs, V
oss
= 25 °C, I
T
TYP.
V
V
V
V
= 0 V to 480 V, V
TEST CONDITIONS
V
f = 1 MHz, open drain
J
DS
DS
GS
-
-
GS
V
while V
DD
= 25 °C, I
DS
DS
= V
= 600 V, V
= 10 V, R
= 0 V, I
V
= 480 V, I
V
is rising from 0 % to 80 % V
= 40 V, I
[e-mail]
V
GS
DS
f = 1 MHz
GS
GS
GS
S
I
DS
= ± 20 V
= 100 V,
D
, I
= 6 A, V
= 0 V,
= 0 V, T
= 6 A, V
F
D
is rising from 0 % to 80 % V
D
= I
= 250 μA
= 250 μA
g
D
www.vishay.com/doc?91000
GS
D
= 9.1 
I
S
= 8 A
D
= 6 A,
D
R
GS
= 6 A,
= 0 V
= 6 A
GS
= 25 V
= 1 mA
J
DS
G
= 0 V
= 125 °C
= 0 V
= 480 V
MAX.
0.85
D
S
62
DSS
MIN.
600
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
.
DSS
Vishay Siliconix
SiHP12N60E
Document Number: 91479
.
TYP.
0.71
0.32
937
136
350
3.8
1.1
53
41
29
13
14
19
35
19
19
5
6
4
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.38
1.2
10
58
28
38
70
38
12
48
4
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/°C
nA
μA
nC
μC
pF
ns
ns


V
V
S
A
V
A