BSS138BKS,115 NXP Semiconductors, BSS138BKS,115 Datasheet - Page 8

• Manufacturer Part Number: BSS138BKS,115
• Description: MOSFET 60 V, 320 mA dual N-ch Trench MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSS138BKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Resistance Drain-source Rds (on): 1.6 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT363-6
• Fall Time: 20 ns
• Forward Transconductance Gfs (max / Min): 0.7 S
• Gate Charge Qg: 0.7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.28 W
• Rise Time: 5 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 38 ns

NXP Semiconductors
BSS138BKS
Product data sheet
Fig 6.
Fig 8.
R
DS(on)
(Ω)
(A)
I
D
0.4
0.3
0.2
0.1
0
6
4
2
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
0
10 V
j
j
= 25 °C
= 25 °C
(1)
GS
GS
GS
GS
GS
GS
2.5 V
= 1.5 V
= 1.75 V
= 2.0 V
= 2.25 V
= 4.5 V
= 10 V
0.1
1
(2)
0.2
2
(3)
(4)
0.3
V
3
GS
(5)
All information provided in this document is subject to legal disclaimers.
aaa-000158
V
aaa-000160
I
= 1.25 V
DS
D
1.75 V
(A)
1.5 V
(V)
(6)
2 V
0.4
Rev. 1 — 12 August 2011
4
Fig 7.
Fig 9.
R
DS(on)
(Ω)
(A)
I
D
10
10
10
10
60 V, 320 mA dual N-channel Trench MOSFET
-3
-4
-5
-6
6
4
2
0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
0
D
j
= 25 °C; V
= 300 mA
j
j
= 150 °C
= 25 °C
2
0.5
(1)
DS
= 5 V
4
1.0
(2)
BSS138BKS
6
(1)
(2)
1.5
© NXP B.V. 2011. All rights reserved.
(3)
8
aaa-000159
V
aaa-000161
V
GS
GS
(V)
(V)
2.0
10
8 of 17