BSS138BKS,115 NXP Semiconductors, BSS138BKS,115 Datasheet - Page 10

• Manufacturer Part Number: BSS138BKS,115
• Description: MOSFET 60 V, 320 mA dual N-ch Trench MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSS138BKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Resistance Drain-source Rds (on): 1.6 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT363-6
• Fall Time: 20 ns
• Forward Transconductance Gfs (max / Min): 0.7 S
• Gate Charge Qg: 0.7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.28 W
• Rise Time: 5 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 38 ns

NXP Semiconductors
BSS138BKS
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= 0.3 A; V
= 0 V
j
j
0.2
= 150 °C
= 25 °C
0.4
DS
= 30 V; T
0.6
0.8
amb
(A)
I
S
1.0
= 25 °C
0.4
0.3
0.2
0.1
0
0
Q
All information provided in this document is subject to legal disclaimers.
aaa-000166
G
1.2
(nC)
1.4
Rev. 1 — 12 August 2011
0.4
(1)
Fig 15. Gate charge waveform definitions
0.8
(2)
60 V, 320 mA dual N-channel Trench MOSFET
V
V
SD
V
V
V
aaa-000167
GS(pl)
DS
GS(th)
GS
(V)
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
BSS138BKS
Q
GD
© NXP B.V. 2011. All rights reserved.
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