STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 17

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Table 12.
Figure 29. I²PAK (TO-262) drawing
DIM.
A1
b1
c2
e1
L1
L2
D
A
E
b
c
e
L
I²PAK (TO-262) mechanical data
min.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
10
13
Doc ID 022853 Rev 2
mm.
typ
Package mechanical data
10.40
max.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
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