STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 12

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

Package mechanical data
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK
is an ST trademark.
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Doc ID 022853 Rev 2
®