IPP50CN10NGXKSA1 Infineon Technologies, IPP50CN10NGXKSA1 Datasheet
IPP50CN10NGXKSA1
Manufacturer Part Number
IPP50CN10NGXKSA1
Description
MOSFET
Manufacturer
Infineon Technologies
Datasheet
1.IPP50CN10NGXKSA1.pdf
(12 pages)
Specifications of IPP50CN10NGXKSA1
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
20 A
Resistance Drain-source Rds (on)
38 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Fall Time
3 ns
Forward Transconductance Gfs (max / Min)
21 S
Gate Charge Qg
12 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
44 W
Rise Time
4 ns
Part # Aliases
IPP50CN10NGHKSA1 SP000680930
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