IPP50CN10N G Infineon Technologies, IPP50CN10N G Datasheet
IPP50CN10N G
Manufacturer Part Number
IPP50CN10N G
Description
MOSFET N-CH 100V 20A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD49CN10N_G.pdf
(12 pages)
Specifications of IPP50CN10N G
Package / Case
TO-220-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 20µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
1090pF @ 50V
Power - Max
44W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
44000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Drain Source Voltage Vds
100V
On Resistance Rds(on)
38mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-220
Rohs Compliant
Yes
Fall Time
3 ns
Rise Time
4 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP50CN10N G
IPP50CN10NGIN
IPP50CN10NGX
IPP50CN10NGXK
SP000096474
IPP50CN10NGIN
IPP50CN10NGX
IPP50CN10NGXK
SP000096474
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IPP50CN10N G Summary of contents
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