ALD210800PCL Advanced Linear Devices, ALD210800PCL Datasheet - Page 7

• Manufacturer Part Number: ALD210800PCL
• Description: MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY
• Manufacturer: Advanced Linear Devices

Specifications of ALD210800PCL

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Resistance Drain-source Rds (on): 25 Ohms
• Configuration: Quad Dual Common Source
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Package / Case: PDIP-16
• Minimum Operating Temperature: 0 C
• Power Dissipation: 500 mW
• Typical Turn-off Delay Time: 10 ns

ALD210800/ALD210800A
100
100
80
60
40
20
80
60
40
20
0
0
5
4
3
1
0
2
0
0
0
GATE SOURCE OVERDRIVE VOLTAGE
V GS = V GS(th) + 4V
GATE SOURCE OVERDRIVE VOLTAGE
DRAIN SOURCE ON VOLTAGE - V DS(ON) (V)
DRAIN SOURCE ON CURRENT - I DS(ON) (mA)
+25°C
-55°C
+70°C
DRAIN SOURCE ON CURRENT vs.
vs. DRAIN SOURCE ON CURRENT
V DS = + 10V
V DS = + 0.2V
GATE SOURCE OVERDRIVE VOLTAGE
OUTPUT CHARACTERISTICS
1
1
2
+125°C
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
V GS - V GS(th) (V)
+25°C
2
4
2
-55°C
3
+125°C
6
3
- 55°C
+70°C
+70°C
0°C
4
8
4
+25°C
+125°C
Advanced Linear Devices
10
5
5
500
400
300
100
200
-1.0
-2.0
1.0
2
2.0
5
4
3
1
0
0
0
ZERO TEMPERATURE COEFFICIENT (ZTC)
-50
0
0
GATE SOURCE OVERDRIVE VOLTAGE
+70°C
DRAIN SOURCE ON CURRENT - I DS(ON) (mA)
+25°C
V+ = V DS = + 5V
vs. DRAIN SOURCE ON CURRENT
GATE THRESHOLD VOLTAGE vs.
V GS(th) = 0.8V
-25
10
GATE SOURCE OVERDRIVE VOLTAGE
V DS = + 0.1V
AMBIENT TEMPERATURE - T A (°C)
+125°C
+0.1
AMBIENT TEMPERATURE
+125°C
V GS(th) = 0.0V
20
0
+0.2
V GS - V GS(th) (V)
+25
V GS(th) = -1.4V
30
- 55°C
+50
40
+0.3
+25°C
Zero Temperature
Coefficient (ZTC)
+75
50
V DS = + 0.1V
I D = 10µA
0°C
+0.4
+100
60
-55°C
+125
7 of 12
+0.5
70