ALD210800PCL Advanced Linear Devices, ALD210800PCL Datasheet - Page 2

• Manufacturer Part Number: ALD210800PCL
• Description: MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY
• Manufacturer: Advanced Linear Devices

Specifications of ALD210800PCL

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Resistance Drain-source Rds (on): 25 Ohms
• Configuration: Quad Dual Common Source
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Package / Case: PDIP-16
• Minimum Operating Temperature: 0 C
• Power Dissipation: 500 mW
• Typical Turn-off Delay Time: 10 ns

Notes:
ABSOLUTE MAXIMUM RATINGS
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V - = GND T A = 25
ALD210800/ALD210800A
Parameter
Gate Threshold Voltage
Offset Voltage
Offset Voltage Tempco
Gate Threshold Voltage Tempco
Drain Source On Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Drain-Source voltage, V DS
Gate-Source voltage, V GS
Operating Current
Power dissipation
Operating temperature range SCL, PCL
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
1
Consists of junction leakage currents
1
1
V GS(th)
V OS
TC VOS
TC VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
R DS (ON)
∆R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
Symbol
°
C unless otherwise specified
-0.01
Min
10
ALD210800A
0.00
+1.6
-1.6
Typ
0.0
1.8
1.6
2.0
1.8
0.6
70
50
24
25
10
10
15
10
10
60
Advanced Linear Devices
1
5
5
1
0.01
400
200
Max
2
4
1
-0.02
Min
10
ALD210800
+1.6
0.00
-1.6
0.0
1.8
1.6
2.0
1.8
0.6
Typ
70
50
24
25
10
10
15
10
10
60
2
5
5
1
Max
0.02
400
200
10
4
1
V
mV
µV/°C
mV/°C
mA
µA
mmho
%
mmho
Ω
KΩ
%
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
Unit
-65°C to +150°C
0°C to +70°C
I DS =10µA, V DS = 0.1V
or V GS(th)M3 -V GS(th)M4
V DS1 = V DS2
I D = 10 µA, V DS = 0.1 V
I D = 380 uA, V DS = 0.1V
I D = 700 uA, V DS = 0.1 V
V GS = +4.0V, V DS = +5V
V GS = +0.1V, V DS = +0.1V
V GS = +4.0V
V DS = +5.0V
V GS = +4.0V
V DS = +5.0V
V GS = +5.0V
V DS = +0.1V
V DS = +0.1V, V GS = +0.0V
V DS = +0.1V, V GS = +0.1V
V DS = +0.1V
V GS = +5.0V
V - = V GS = -1.0V
I DS = 10µA
V GS = -1.0V, V DS =+5V
V - = -5V
T A = 125°C
V GS = +5V, V DS = 0V
T A =125°C
V + = 5V, R L = 5KΩ
V + = 5V, R L = 5KΩ
f = 100KHz
Test Conditions
V GS(th)M1 -V GS(th)M2
500 mW
+260°C
80 mA
10.6V
10.6V
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