ALD210800PCL Advanced Linear Devices, ALD210800PCL Datasheet

ALD210800PCL

Manufacturer Part Number

ALD210800PCL

Description

MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY

Manufacturer

Advanced Linear Devices

Datasheet

1.ALD210800APCL.pdf (12 pages)

Specifications of ALD210800PCL

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

10 V

Resistance Drain-source Rds (on)

25 Ohms

Configuration

Quad Dual Common Source

Maximum Operating Temperature

+ 70 C

Mounting Style

Through Hole

Package / Case

PDIP-16

Minimum Operating Temperature

0 C

Power Dissipation

500 mW

Typical Turn-off Delay Time

10 ns

Current page: 1 of 12
Download datasheet (109Kb)

ORDERING INFORMATION

GENERAL DESCRIPTION

ALD210800A/ALD210800 precision N-Channel EPAD

sion matched at the factory using ALD’s proven EPAD

quad monolithic devices are enhanced additions to the ALD110800A/ALD110800

EPAD

conductance, particularly at very low supply voltages.

Intended for low voltage, low power small signal applications, the ALD210800A/

ALD210800 features Zero-Threshold™ voltage, which enables circuit designs

with input/output signals referenced to GND at enhanced operating voltage

ranges. With these devices, a circuit with multiple cascading stages can be

built to operate at extremely low supply/bias voltage levels. For example, a

nanopower input amplifier stage operating at <0.2V supply voltage has been

successfully built with these devices.

ALD210800A/ALD210800 EPAD MOSFETs feature exceptional matched pair

device electrical characteristics of Gate Threshold Voltage V

at +0.00V + 0.01V, I

only +/- 0.001V (1mV). Built on a single monolithic chip, they also exhibit excel-

lent temperature tracking characteristics. These precision devices are versatile

as design components for a broad range of analog small signal applications

such as basic building blocks for current mirrors, matching circuits, current

sources, differential amplifier input stages, transmission gates, and multiplex-

ers. They also excel in limited operating voltage applications, such as very low

level voltage-clamps and nano-power normally-on circuits.

In addition to precision matched-pair electrical characteristics, each individual

EPAD MOSFET also exhibits well controlled manufacturing characteristics, en-

abling the user to depend on tight design limits from different production batches.

These devices are built for minimum offset voltage and differential thermal re-

sponse, and they can be used for switching and amplifying applications in +0.1V

to +10V (+/- 0.05V to +/-5V) powered systems where low input bias current, low

input capacitance, and fast switching speed are desired. At V

device exhibits enhancement mode characteristics whereas at V

device operates in the subthreshold voltage region and exhibits conventional

depletion mode characteristics, with well controlled turn-off and sub-threshold

levels that operate the same as standard enhancement mode MOSFETs.

ALD210800A/ALD210800 features high input impedance (2.5 x 10

DC current gain (>10

output current of 30mA and input current of 300pA at 25°C is 30mA/300pA =

100,000,000, which translates into a dynamic operating current range of about

eight orders of magnitude. A series of four graphs titled “Forward Transfer Char-

acteristic”, with sub-titles of second “expanded (subthreshold)”, third “further

expanded (subthreshold)” and fourth “Low Voltage” illustrates the unique wide

dynamic operating range of these devices.

Generally it is recommended that the V+ pin be connected to the most positive

voltage and the V- and IC (internally-connected) pins to the most negative volt-

age in the system. All other pins must have voltages within these voltage limits

at all times. Standard ESD protection facilities and handling procedures for static

sensitive devices are highly recommended when using these devices.

* Contact factory for industrial temp. range or user-specified threshold voltage values.

MOSFET Family, with increased forward transconductance and output

16-Pin SOIC

Package

ALD210800ASCL

ALD210800SCL

INEAR

DVANCED

EVICES,

Operating Temperature Range*

). A sample calculation of the DC current gain at a drain

= +10µA @ V

0°C to +70°C

NC.

(“L” suffix

PRECISION N-CHANNEL EPAD

QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR

16-Pin Plastic Dip

Package

ALD210800APCL

ALD210800PCL

denotes lead-free (RoHS))

= 0.1V, with a typical offset voltage of

CMOS technology. These

MOSFET array is preci-

GS(th)

set precisely

> 0.00V, the

Ω) and high

<0.00V the

www.aldinc.com

MOSFET ARRAY

FEATURES & BENEFITS

• Zero Threshold™ V

• V

• Sub-threshold voltage (nano-power) operation

• < 100 mV Min. operating voltage

• < 1 nA Min. operating current

• < 1 nW Min. operating power

• > 100,000,000:1 operating current ranges

• High transconductance and output conductance

• Low R

• Output current > 50 mA

• Matched and tracked tempco

• Tight lot-to-lot parametric control

• Positive, zero, and negative V

• Low input capacitance and leakage currents

APPLICATIONS

• Low overhead current mirrors and current sources

• Zero Power Normally-On circuits

• Energy harvesting detectors

• Very low voltage analog and digital circuits

• Zero power fail-safe circuits

• Backup battery circuits & power failure detector

• Extremely low level voltage-clamps

• Extremely low level zero-crossing detectors

• Matched source followers and buffers

• Precision current mirrors and current sources

• Matched capacitive probes and sensor interfaces

• Charge detectors and charge integrators

• High gain differential amplifier input stage

• Matched peak-detectors and level-shifters

• Multiple Channel Sample-and-Hold switches

• Precision Current multipliers

• Discrete matched analog switches / multiplexers

• Nanopower discrete voltage comparators

PIN CONFIGURATION

IC*

*IC pins are internally connected, connect to V-

DS(ON)

GS(th)

match) to 2mV / 10mV max.

SCL, PCL PACKAGES

of 25Ω

ALD210800/ALD210800A

M 4

M 1

ALD210800

GS(th)

V GS(th) = +0.00V

= 0.00 V +/-0.01V

M 3

M 2

GS(th)

tempco

1 of 12

IC*

EPAD

Related parts for ALD210800PCL

ALD210800PCL Summary of contents

Page 1

... Operating Temperature Range* 0°C to +70°C 16-Pin SOIC 16-Pin Plastic Dip Package Package ALD210800ASCL ALD210800APCL ALD210800SCL ALD210800PCL * Contact factory for industrial temp. range or user-specified threshold voltage values. ©2013 Advanced Linear Devices, Inc., Vers. 1.0 ® MOSFET array is preci- ® CMOS technology. These set precisely GS(th ...

Page 2

... Advanced Linear Devices 10.6V 10. 500 mW 0°C to +70°C -65°C to +150°C +260°C Typ Max Unit Test Conditions 0. =10µ 0. GS(th)M1 -V GS(th) GS(th)M3 -V GS(th) DS1 = V DS2 µV/°C -1.6 mV/° ...

Page 3

... V to turn on. Precision DS(ON) GS trolled resistor. For higher values of V the saturation current I IDS(ON) and DS(ON) Advanced Linear Devices ® is set at a negative voltage level (V GS(th) >V-) at which the EPAD MOSFET turns off. Without 0.00V = Ground, the EPAD EPAD MOSFET may be DS(ON) . These Depletion Mode EPAD ...

Page 4

... V- and V+. This way internally back biased diodes are never allowed to become forward biased, possi- bly causing damage to the device. Standard ESD control procedures should be observed so that static charge does not degrade the performance of the devices. Advanced Linear Devices causes the subthreshold I-V curves GS . GS(th 10µ ...

Page 5

... GS(th) + GS(th) + GS(th) + GS(th) + GS(th) + 1000000.00 100000.00 V GS(th) = 0.0V V GS(th) = +0.2V V GS(th) = +0.4V V GS(th) = +0.8V V GS(th) = +1. 1000000.00 +0.1 +0.2 +0.3 +0.4 +0.5 Advanced Linear Devices LOW VOLTAGE OUTPUT CHARACTERISTICS -10 -20 -30 -40 -0.4 -0.3 -0.2 -0.1 0.0 +0.1 DRAIN SOURCE ON VOLTAGE - V DS(ON) (V) FORWARD TRANSFER CHARACTERISTICS EXPANDED (SUBTHRESHOLD 25°C 10000 ...

Page 6

... AMBIENT TEMPERATURE - T A (°C) ALD210800/ALD210800A GS(th 5.0V +50 +75 +100 +125 GS(th 5.0V 0 +1.0 +2.0 +3.0 +50 +75 +100 +125 Advanced Linear Devices HIGH LEVEL OUTPUT CONDUCTANCE vs. GATE THRESHOLD VOLTAGE 2 25°C 2.0 1.5 1 GS(th 5.0V 0.5 0 -4.0 -3.0 -2.0 -1.0 0.0 +1.0 GATE THRESHOLD VOLTAGE - V GS(th) (V) HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE 3 ...

Page 7

... ALD210800/ALD210800A +125°C +70° -55°C +70°C +125° +25°C 0°C - 55° Advanced Linear Devices ZERO TEMPERATURE COEFFICIENT (ZTC) 500 0.1V 400 300 +125°C 200 +25°C Zero Temperature Coefficient (ZTC) 100 - 55° +0.1 +0.2 +0.3 GATE SOURCE OVERDRIVE VOLTAGE ...

Page 8

... DRAIN OFF LEAKAGE CURRENT I DS(OFF) vs. AMBIENT TEMPERATURE 600 500 400 300 200 100 0 -50 0 -25 +25 AMBIENT TEMPERATURE - T A (°C) ALD210800/ALD210800A I DS(OFF) +50 +75 +100 +125 Advanced Linear Devices OFFSET VOLTAGE vs. AMBIENT TEMPERATURE +10 +8 REPRESENTATIVE UNITS GS(th GS(th GS(th GS(th -10 -50 -25 0 ...

Page 9

... V DS 1/2 ALD1105, 1/2 ALD1107, or 1/2 ALD3107xx Package OUT - M3, M4: ALD1102, ALD1117, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1107, or 1/2 ALD3107xx Advanced Linear Devices CURRENT SOURCE WITH GATE CONTROL + SET SET ON I SOURCE M 1 OFF M1: M3, M4: 1/2 ALD1101, ALD1102, 1/2 ALD1116, ALD1117, 1/2 ALD1109xx, 1/2 ALD1103, ...

Page 10

... ALD1105, 1/2 ALD1106, 1/2 ALD1108xx, or 1/2 ALD2108xx CASCODE CURRENT SOURCES + SET SET M3, M4: ALD1101, ALD1116, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1106, or 1/2 ALD2108xx Advanced Linear Devices P- CHANNEL CURRENT SOURCE + SET SET SOURCE M3, M4: ALD1102, ALD1117, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1107, or ...

Page 11

... Pin Plastic SOIC Package E Dim Min 1. 0.35 b 0.18 C 9.80 D-16 3. 5. ø 0° 0. ø Advanced Linear Devices Millimeters Inches Max Min 1.75 0.053 0.25 0.004 0.45 0.014 0.25 0.007 10.00 0.385 4.05 0.140 1.27 BSC 0.050 BSC 6.30 0.224 0.937 0.024 8° 0° 0.50 0.010 Max 0.069 0.010 0.018 0.010 ...

Page 12

... ALD210800/ALD210800A PDIP-16 PACKAGE DRAWING 16 Pin Plastic DIP Package Dim 18.93 D- S-16 ø Advanced Linear Devices Millimeters Min Max Min 3.81 5.08 0.105 0.38 1.27 0.015 2.03 0.050 1.27 1.65 0.035 0.89 0.38 0.51 0.015 0.20 0.30 0.008 21.33 0.745 7.11 0.220 5.59 7.62 8.26 0.300 2.29 2.79 0.090 7.37 7 ...

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