SIHP6N40D-E3 Vishay/Siliconix, SIHP6N40D-E3 Datasheet - Page 4

• Manufacturer Part Number: SIHP6N40D-E3
• Description: MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHP6N40D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 6 A
• Resistance Drain-source Rds (on): 1 Ohms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Power Dissipation: 104 W

S12-0687-Rev. A, 02-Apr-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
0.1
0.01
100
10
0.1
1
10
1
1
0.2
* V
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
GS
C
J
Operation in this Area
Limited by R
= 150 °C
0.01
= 25 °C
> minimum V
0.1
0.4
www.vishay.com
1
T
V
0.0001
V
Limited by R
J
DS
SD
= 150 °C
, Drain-to-Source Voltage (V)
Duty Cycle = 0.5
, Source-Drain Voltage (V)
0.02
0.2
0.1
0.05
0.6
Single Pulse
10
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS(on)
GS
0.8
DS(on)
at which R
BVDSS Limited
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
*
T
I
DM
1
J
100
= 25 °C
= Limited
V
DS(on)
GS
1.2
= 0 V
0.001
is specified
For technical questions, contact:
1.4
10 ms
1 ms
100 μs
1000
1.6
Pulse Time (s)
4
0.01
[e-mail]
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
500
475
450
425
400
375
350
0
4
3
2
1
6
5
www.vishay.com/doc?91000
- 60
25
- 40 - 20
0.1
T
50
J
, Junction Temperature (°C)
T
J
0
, Case Temperature (°C)
20 40 60 80 100 120 140
75
Vishay Siliconix
100
Document Number: 91498
SiHP6N40D
1
125
160
150