SIHP6N40D-E3 Vishay/Siliconix, SIHP6N40D-E3 Datasheet - Page 2

• Manufacturer Part Number: SIHP6N40D-E3
• Description: MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHP6N40D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 6 A
• Resistance Drain-source Rds (on): 1 Ohms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Power Dissipation: 104 W

Notes
a. C
b. C
S12-0687-Rev. A, 02-Apr-12
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
DS
oss(er)
oss(tr)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Temperature Coefficient
a
b
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same energy as C
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
= 25 °C, unless otherwise noted)
For technical questions, contact:
SYMBOL
SYMBOL
V
R
V
R
C
R
C
t
t
I
I
C
V
I
C
C
Q
V
GS(th)
DS(on)
Q
d(on)
d(off)
I
RRM
GSS
DSS
g
Q
Q
DS
R
SM
t
thJA
thJC
o(er)
I
o(tr)
t
t
DS
oss
SD
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
g
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
oss
V
GS
GS
Reference to 25 °C, I
DS
while V
T
= 10 V
= 10 V
2
J
= 320 V, V
dI/dt = 100 A/μs, V
oss
= 25 °C, I
T
TYP.
V
V
V
V
TEST CONDITIONS
V
f = 1 MHz, open drain
J
DS
DS
GS
-
-
GS
V
DD
while V
V
= 25 °C, I
DS
DS
DS
= V
= 400 V, V
= 10 V, R
= 0 V, I
V
= 400 V, I
V
is rising from 0 % to 80 % V
= 50 V, I
[e-mail]
V
V
GS
DS
f = 1 MHz
= 0 V to 320 V
GS
GS
GS
GS
S
I
DS
= ± 30 V
= 100 V,
D
, I
= 3 A, V
= 0 V,
= 0 V,
= 0 V, T
= 3 A, V
F
D
D
is rising from 0 % to 80 % V
= I
= 250 μA
= 250 μA
g
D
www.vishay.com/doc?91000
GS
D
= 9.1 
I
D
S
= 3 A
D
= 3 A,
R
= 3 A,
= 250 μA
= 0 V
= 3 A
GS
= 20 V
J
DS
G
= 125 °C
= 0 V
= 320 V
MAX.
1.2
D
S
62
DS
MIN.
400
.
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
Vishay Siliconix
Document Number: 91498
.
SiHP6N40D
TYP.
0.53
0.85
311
236
1.7
1.9
1.1
38
44
54
12
11
14
7
9
3
4
8
9
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
1.0
1.2
10
18
24
22
28
16
24
5
1
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/°C
nA
μA
nC
μC
pF
ns
ns


V
V
S
A
V
A