ZXMN3A01ZTA Diodes Inc. / Zetex, ZXMN3A01ZTA Datasheet - Page 5

• Manufacturer Part Number: ZXMN3A01ZTA
• Description: MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMN3A01ZTA

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.3 A
• Resistance Drain-source Rds (on): 120 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Fall Time: 3.6 ns
• Gate Charge Qg: 2.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.97 W
• Rise Time: 4.1 ns
• Typical Turn-off Delay Time: 13.5 ns

Package Outline Dimensions
Suggested Pad Layout
ZXMN3A01Z
Document number DS35722 Rev. 1 - 2
E
B1
Y3
Y
X (3x)
B
D1
e1
D
X2 (2x)
X1
e
Y2
C
L
A
Y4
Y1
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C
5 of 6
H
Dimensions Value (in mm)
X1
X2
Y1
Y2
Y3
Y4
X
Y
C
Dim
B1
D1
e1
A
B
C
D
E
H
e
L
All Dimensions in mm
1.40
0.44
0.35
0.35
4.40
1.52
2.29
3.94
0.89
Min
SOT89
0.900
1.733
0.416
1.300
4.600
1.475
0.950
1.125
1.500
1.50 Typ
3.00 Typ
Diodes Incorporated
A Product Line of
Max
1.60
0.62
0.54
0.43
4.60
1.83
2.60
4.25
1.20
ZXMN3A01Z
© Diodes Incorporated
February 2012