ZXMN3A01ZTA Diodes Inc. / Zetex, ZXMN3A01ZTA Datasheet - Page 3

• Manufacturer Part Number: ZXMN3A01ZTA
• Description: MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMN3A01ZTA

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.3 A
• Resistance Drain-source Rds (on): 120 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Fall Time: 3.6 ns
• Gate Charge Qg: 2.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.97 W
• Rise Time: 4.1 ns
• Typical Turn-off Delay Time: 13.5 ns

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Note 7 & 9)
Diodes Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8 & 9)
Output Capacitance (Note 8 & 9)
Reverse Transfer Capacitance (Note 8 & 9)
Gate Charge (Note 8 & 9)
Total Gate Charge (Note 8 & 9)
Gate-Source Charge (Note 8 & 9)
Gate-Drain Charge (Note 8 & 9)
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
Turn-On Delay Time (Note 8 & 9)
Turn-On Rise Time (Note 8 & 9)
Turn-Off Delay Time (Note 8 & 9)
Turn-Off Fall Time (Note 8 & 9)
Notes:
ZXMN3A01Z
Document number DS35722 Rev. 1 - 2
10
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
9
8
7
6
5
4
3
2
1
0
0
Fig. 4 Typical Output Characteristic, T = 25°C
V , DRAIN-SOURCE VOLTAGE (V)
Characteristic
DS
1
2
J
= 25°C
@T
3
A
= 25°C unless otherwise specified
A
4
Symbol
R
BV
V
DS (ON)
t
t
5
I
I
C
V
C
GS(th)
g
C
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
www.diodes.com
t
oss
t
t
FS
SD
rss
DSS
iss
rr
gs
gd
r
f
g
g
rr
3 of 6
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
0.106
0.85
17.7
13.0
13.5
Typ
186
9
8
7
6
5
4
3
2
1
0
3.5
2.6
5.0
0.8
1.2
2.6
4.1
3.6
48
29
-
-
-
-
-
0
Fig. 5 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
Max
0.95
100
120
180
0.5
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
Unit
mΩ
Diodes Incorporated
μA
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2
A Product Line of
V
V
V
V
V
V
V
T
V
f = 1.0MHz
V
V
I
T
di/dt = 100A/μs
V
R
D
J
J
GS
DS
GS
DS
GS
GS
DS
DS
GS
GS
GS
G
= 2.5A
= 25°C, I
= 25°C, I
= 6Ω , I
= 0V, I
= 30V, V
= ±20V, V
= V
= 10V, I
= 4.5V, I
= 4.5V, I
= 25V, V
= 4.5V, V
= 10V, V
= 10V, V
3
GS
Test Condition
, I
D
D
S
S
ZXMN3A01Z
D
D
, T = 150°C
D
= 2.5A
= 250μA
D
GS
GS
DS
DD
= 1.7A, V
= 2.5A,
DS
= 250μA
= 2.5A
DS
= 2.5A
A
= 2A
4
= 0V
= 0V,
= 15V,
= 15V,
= 15V, I
= 0V
© Diodes Incorporated
February 2012
GS
D
5
= 0V
= 2.5A