ZXMN3A01ZTA Diodes Inc. / Zetex, ZXMN3A01ZTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3A01ZTA
• Description: MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMN3A01ZTA

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.3 A
• Resistance Drain-source Rds (on): 120 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Fall Time: 3.6 ns
• Gate Charge Qg: 2.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.97 W
• Rise Time: 4.1 ns
• Typical Turn-off Delay Time: 13.5 ns

Thermal Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 6)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
ZXMN3A01Z
Document number DS35722 Rev. 1 - 2
1,000
100
0.0001
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm FR-4 substrate PC board with 2oz copper
6. Single pulse rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature.
10
1
Fig. 1 Single Pulse Maximum Power Dissipation
0.001 0.01
0.001
0.01
0.00001
0.1
t1, PULSE DURATION TIME (sec)
1
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
@T
0.00001
A
0.1
= 25°C unless otherwise specified
Steady
State
Characteristic
Characteristic
@T
1
A
= 25°C unless otherwise specified
0.0001
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Single Pulse
R
R
T - T = P * R
J
θ
θ
JA
JA(t)
10
@ V
@ V
@ V
= 57 C/W
A
= r
GS
GS
GS
°
(t)
100 1,000
* R
= 10V ; T
= 10V ; T
= 10V ; T
0.001
θ
θ
JA(t)
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
JA
www.diodes.com
A
A
A
= 25°C (Note 5)
= 75°C (Note 5)
= 75°C (Note 4)
0.01
2 of 6
D = 0.9
0.1
0.01
100
0.1
10
1
0.1
T
T = 25°C
V
Single Pulse
DUT on 1in. Board
J(max)
A
GS
1
= 10V
V , DRAIN-SOURCE VOLTAGE (V)
= 150°C
DS
Symbol
T
Fig. 2 SOA, Safe Operation Area
Symbol
J
DC
R
V
V
P
R
R
Duty Cycle, D = t1/ t2
,
P
2
I
I
T
GSS
θJA
W
DSS
I
DM
I
SM
θ
θ
D
S
D
STG
JA
JA
= 10s
P
R
Limited
W
(t) = r(t) * R
10
1
DS(on)
P
= 57°C/W
Diodes Incorporated
= 1s
W
= 100ms
P
A Product Line of
W
= 10ms
P
W
P
-55 to +150
100
W
θ
= 1ms
JA
Value
= 100µs
Value
0.97
2.12
129
±20
3.3
2.7
2.2
3.3
59
30
20
20
10
1,000
ZXMN3A01Z
P
© Diodes Incorporated
W
= 10 s
February 2012
°C/W
°C/W
100
µ
Unit
Unit
°C
W
W
V
V
A
A
A
A