DMN2300UFL4-7 Diodes Inc. / Zetex, DMN2300UFL4-7 Datasheet - Page 5

• Manufacturer Part Number: DMN2300UFL4-7
• Description: MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS
• Manufacturer: Diodes Inc. / Zetex

Specifications of DMN2300UFL4-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.11 A
• Resistance Drain-source Rds (on): 520 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: X2-DFN1310-6
• Fall Time: 13 ns
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.53 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

DMN2300UFL4
Datasheet Number: DS35946 Rev. 1 - 2
1,000
100
8
6
4
2
0
10
0
1
2
4
0.5
Fig. 13 Gate-Charge Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
DS
g
Fig. 11 Typical Leakage Current
6
vs. Drain-Source Voltage
1
8
T = 125°C
T = 85°C
A
T = 25°C
T = -55°C
A
10
V
A
A
DS
I = 1A
1.5
D
= 15V
12
2
14
16
2.5
18
3
20
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100,000
10,000
1,000
100
10
1
2
Fig.12 Leakage Current vs. Gate-Source Voltage
Diodes Incorporated
V
GS
4
A Product Line of
, GATE-SOURCE VOLTAGE (V)
T = 125°C
A
6
T = 85°C
A
T = 25°C
8
T = -55°C
DMN2300UFL4
A
T = 150°C
A
A
10
© Diodes Incorporated
May 2012
12