DMN2300UFL4-7 Diodes Inc. / Zetex, DMN2300UFL4-7 Datasheet - Page 4

• Manufacturer Part Number: DMN2300UFL4-7
• Description: MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS
• Manufacturer: Diodes Inc. / Zetex

Specifications of DMN2300UFL4-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.11 A
• Resistance Drain-source Rds (on): 520 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: X2-DFN1310-6
• Fall Time: 13 ns
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.53 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

DMN2300UFL4
Datasheet Number: DS35946 Rev. 1 - 2
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
0.4
0.3
0.2
0.1
0
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25
0
-50 -25
0
Fig. 7 On-Resistance Variation with Temperature
T , AMBIENT TEMPERATURE (°C)
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
A
D
T , AMBIENT TEMPERATURE (°C)
0.4
Fig. 5 Typical On-Resistance
A
0
0
I = 250µA
D
25
25
0.8
I = 1mA
50
D
50
V
V
1.2
75
GS
GS
V
75
I = 1.0A
GS
= 2.5V
D
= 4.5V
= 4.5V
100
100
1.6
I = 500mA
V
125 150
D
GS
125 150
= 2.5V
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0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
2.0
1.6
1.2
0.8
0.4
0
0
0
-50 -25
0
0
Fig. 8 On-Resistance Variation with Temperature
0.25
Fig. 10 Diode Forward Voltage vs. Current
V
GS
V , SOURCE-DRAIN VOLTAGE (V)
0.2
T , AMBIENT TEMPERATURE (°C)
vs. Drain Current and Temperature
SD
A
Diodes Incorporated
= 4.5V
Fig. 6 Typical On-Resistance
0.5
0
A Product Line of
I , DRAIN CURRENT (A)
D
0.4
0.75
25
I = 500mA
V
D
GS
= 2.5V
V
50
0.6
I = 1.0A
1
GS
D
T = 125°C
T = 25°C
A
A
= 4.5V
1.25
75
DMN2300UFL4
0.8
100
1.5 1.75
T = 150°C
T = 85°C
T = 25°C
T = -55°C
A
A
A
A
1.0
© Diodes Incorporated
125 150
1.2
May 2012
2