DMN2300UFL4-7 Diodes Inc. / Zetex, DMN2300UFL4-7 Datasheet - Page 3

• Manufacturer Part Number: DMN2300UFL4-7
• Description: MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS
• Manufacturer: Diodes Inc. / Zetex

Specifications of DMN2300UFL4-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.11 A
• Resistance Drain-source Rds (on): 520 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: X2-DFN1310-6
• Fall Time: 13 ns
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.53 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

Electrical Characteristics
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN2300UFL4
Datasheet Number: DS35946 Rev. 1 - 2
8. Short duration pulse test used to minimize self-heating effect.
2.0
1.5
1.0
0.5
0
0
V
V , DRAIN-SOURCE VOLTAGE (V)
GS
V
DS
Fig. 3 Typical Output Characteristic
Characteristic
V
GS
= 1.8V
V
1
GS
GS
= 2.0V
= 2.5V
= 4.5V
2
J
= 25°C
@T
V
V
3
A
GS
GS
= 25°C unless otherwise specified
= 1.5V
= 1.2V
4
Symbol
R
BV
V
5
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DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
|
3 of 7
0.45
Min
20
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
1.5
1.0
0.5
64.3
Typ
0.7
6.1
4.5
1.6
0.2
0.2
3.5
2.8
70
38
13
0
-
-
-
-
-
-
-
-
0
V
DS
Max
0.95
380
520
195
260
0.5
1.2
T = 125°C
V
Fig. 4 Typical Transfer Characteristic
10
= 5V
1
A
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated
GS
T = 150°C
A
, GATE-SOURCE VOLTAGE (V)
A Product Line of
1
Unit
mΩ
mS
nC
nC
nC
μA
μA
pF
pF
pF
ns
ns
ns
ns
V
V
V
Ω
T = -55°C
A
1.5
T = 25°C
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
V
D
A
GS
DS
GS
DS
GS
GS
GS
GS
DS
GS
DS
DS
GS
DS
GS
= 1A
T = 85°C
A
= 0V, I
= 20V, V
= ±8V, V
= V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 1.5V, I
= 3V, I
= 0V, I
= 25V, V
= 0V, V
= 4.5V, V
= 10V, I
= 10V, R
DMN2300UFL4
2
GS
Test Condition
, I
D
D
S
GS
D
D
= 30mA
= 300mA
= 10μA
D
D
D
D
GS
DS
GS
G
DS
= 250μA
= 1A
= 300mA
= 250mA
= 100mA
= 50mA
= 0V, f = 1MHz
= 6Ω
2.5
= 0V
= 0V
= 0V,
© Diodes Incorporated
= 15V,
May 2012
3