SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet - Page 9

• Manufacturer Part Number: SPP16N50C3XKSA1
• Description: MOSFET
• Manufacturer: Infineon Technologies

Specifications of SPP16N50C3XKSA1

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.28 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 14 S
• Gate Charge Qg: 66 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 160 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 50 ns
• Part # Aliases: SP000681056 SPP16N50C3HKSA1

Rev. 3.2
17 Avalanche power losses
P
parameter: E
19 Typ. C
E
AR
oss
µJ
W
450
350
300
250
200
150
100
=f(V
= f (f )
50
0
9
7
6
5
4
3
2
1
0
10
0
2
DS
oss
)
100
AR
stored energy
10
=0.64mJ
3
200
10
4
300
10
V
5
f
V
Hz
DS
500
p age 9
10
6
18 Typ. capacitances
C = f (V
parameter: V
pF
10
10
10
10
10
4
3
2
1
0
0
DS
)
SPI16N50C3, SPA16N50C3
100
GS
Crss
Coss
=0V, f=1 MHz
Ciss
200
300
SPP16N50C3
2009-12-22
V
V
DS
500