SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet - Page 13
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SPP16N50C3XKSA1
Manufacturer Part Number
SPP16N50C3XKSA1
Description
MOSFET
Manufacturer
Infineon Technologies
Datasheet
1.SPP16N50C3XKSA1.pdf
(14 pages)
Specifications of SPP16N50C3XKSA1
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
560 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Resistance Drain-source Rds (on)
0.28 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Fall Time
8 ns
Forward Transconductance Gfs (max / Min)
14 S
Gate Charge Qg
66 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
160 W
Rise Time
8 ns
Typical Turn-off Delay Time
50 ns
Part # Aliases
SP000681056 SPP16N50C3HKSA1
SPP16N50C3
SPI16N50C3, SPA16N50C3
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
p age 13
Rev. 3.2
2009-12-22