SIHS36N50D-E3 Vishay/Siliconix, SIHS36N50D-E3 Datasheet - Page 5
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SIHS36N50D-E3
Manufacturer Part Number
SIHS36N50D-E3
Description
MOSFET 500V 130mOhm@10V 36A N-Ch D-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHS36N50D-E3.pdf
(8 pages)
Specifications of SIHS36N50D-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
36 A
Resistance Drain-source Rds (on)
130 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
Super-247
Fall Time
68 ns
Forward Transconductance Gfs (max / Min)
12.8 S
Gate Charge Qg
125 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
446 W
Rise Time
89 ns
Typical Turn-off Delay Time
79 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
S12-1457-Rev. A, 18-Jun-12
Vary t
required I
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
p
Fig. 14 - Unclamped Inductive Test Circuit
Fig. 15 - Unclamped Inductive Waveforms
to obtain
V
I
90 %
10 %
AS
AS
Fig. 12 - Switching Time Test Circuit
DS
V
Fig. 13 - Switching Time Waveforms
V
DS
GS
R
R
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
10 V
www.vishay.com
G
G
10 V
V
GS
t
V
d(on)
DS
V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS
t
p
t
r
t
p
I
AS
D.U.T.
D.U.T.
0.01 Ω
L
R
D
t
d(off)
V
DS
For technical questions, contact:
t
f
V
+
-
V
DD
DD
+
-
V
DD
5
hvm@vishay.com
10 V
www.vishay.com/doc?91000
Fig. 16 - Basic Gate Charge Waveform
12 V
V
V
G
Fig. 17 - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
Q
0.2 μF
GS
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 μF
Q
GD
G
I
G
Vishay Siliconix
SiHS36N50D
Document Number: 91514
D.U.T.
I
D
+
-
V
DS