SIHS36N50D-E3 Vishay/Siliconix, SIHS36N50D-E3 Datasheet

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SIHS36N50D-E3

Manufacturer Part Number
SIHS36N50D-E3
Description
MOSFET 500V 130mOhm@10V 36A N-Ch D-SRS
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SIHS36N50D-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
36 A
Resistance Drain-source Rds (on)
130 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
Super-247
Fall Time
68 ns
Forward Transconductance Gfs (max / Min)
12.8 S
Gate Charge Qg
125 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
446 W
Rise Time
89 ns
Typical Turn-off Delay Time
79 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIHS36N50D-E3
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
c. 1.6 mm from case.
d. I
S12-1457-Rev. A, 18-Jun-12
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (T
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
max. (nC)
(nC)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
(V) at T
(nC)
 I
= 50 V, starting T
D
max. at 25 °C ()
Super-247
, starting T
J
max.
www.vishay.com
J
= 25 °C.
d
a
G
J
D
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 25 °C, L = 2.3 mH, R
S
J
= 150 °C)
b
V
GS
= 10 V
G
N-Channel MOSFET
D Series Power MOSFET
Single
For technical questions, contact:
550
125
23
37
g
= 25 , I
C
D
S
= 25 °C, unless otherwise noted)
0.130
V
GS
AS
at 10 V
= 17 A.
T
J
for 10 s
= 125 °C
T
1
T
C
C
Super-247
SiHS36N50D-E3
= 100 °C
= 25 °C
FEATURES
• Optimal Design
• Optimal Efficiency and Operation
• Material categorization: For definitions of compliance
APPLICATIONS
• Consumer Electronics
• Server and Telecom Power Supplies
• Industrial
• Battery Chargers
please see
- Low Area specific On-Resistance
- Low Input Capacitance (C
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (U
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-Of-Merit (FOM): R
- Fast Switching
- Displays (LCD or Plasma TV
- SMPS
- Welding, Induction Heating, Motor Drives
hvm@vishay.com
SYMBOL
www.vishay.com/doc?91000
T
dV/dt
J
www.vishay.com/doc?99912
V
V
E
I
, T
P
DM
I
GS
DS
D
AS
D
stg
- 55 to + 150
iss
LIMIT
300
± 30
500
112
332
446
IS
3.6
0.1
30
36
23
24
)
)
on
Vishay Siliconix
c
SiHS36N50D
Document Number: 91514
x Q
g
UNIT
W/°C
V/ns
mJ
°C
°C
W
V
A

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SIHS36N50D-E3 Summary of contents

Page 1

... APPLICATIONS • Consumer Electronics - Displays (LCD or Plasma TV S • Server and Telecom Power Supplies - SMPS • Industrial - Welding, Induction Heating, Motor Drives • Battery Chargers Super-247 SiHS36N50D- °C, unless otherwise noted) C SYMBOL ° 100 °C ...

Page 2

... dI/dt = 100 A/μ RRM while V is rising from oss DS while V is rising from oss DS 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHS36N50D Vishay Siliconix MAX. UNIT 40 °C/W 0.28 MIN. TYP. MAX. 500 - - = 250 μA - 0.52 - 3 ± 100 ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHS36N50D Vishay Siliconix = 100 120 140 160 T , Junction Temperature (° MHz iss GS C ...

Page 4

... Fig Maximum Drain Current vs. Case Temperature 100 μ 1000 - Fig Temperature vs. Drain-to-Source Voltage 0.01 Pulse Time (s) 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHS36N50D Vishay Siliconix 50 75 100 125 150 T , Case Temperature (° 100 120 140 Junction Temperature (° ...

Page 5

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig Basic Gate Charge Waveform For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHS36N50D Vishay Siliconix Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 μF 0.3 μ D.U. ...

Page 6

... Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHS36N50D Vishay Siliconix + + Document Number: 91514 ...

Page 7

TO-274AA (HIGH VOLTAGE Detail “A” 0.10 (0.25) Lead Tip MILLIMETERS DIM. MIN. MAX. A 4.70 5.30 A1 1.50 2.50 A2 2.25 2.65 b 1.30 1.60 b2 1.80 2.20 b4 3.00 3.25 c ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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