BSS169H6327XT Infineon Technologies, BSS169H6327XT Datasheet - Page 5

• Manufacturer Part Number: BSS169H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS169H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 mA
• Resistance Drain-source Rds (on): 6 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 27 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 2.7 ns
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: BSS169 BSS169H6327XTSA1 H6327

Rev. 1.8
Rev. 1.8
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0.5
0.4
0.3
0.2
0.1
DS
GS
0
0
0
); T
); |V
-2
0
0
j
=25 °C
DS
GS
10 V
10 V
|>2|I
2
2
1 V
1 V
-1
D
|R
DS(on)max
4
4
V
V
V
DS
DS
GS
0
[V]
[V]
[V]
6
6
1
8
8
-0.1 V
-0.1 V
-0.2 V
-0.2 V
0.5 V
0.5 V
0.1 V
0.1 V
0 V
0 V
0.2 V
0.2 V
10
10
2
page 5
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
14
14
12
12
10
10
D
=f(I
0
8
8
6
6
4
4
2
2
0
0
); T
0.00
0
0
D
j
); T
=25 °C
GS
j
=25 °C
0.10
0.1
0.1
-0.2 V
-0.2 V
0.20
-0.1 V
-0.1 V
0.2
0.2
0 V
0 V
I
I
I
0.1 V
0.1 V
D
D
D
[A]
[A]
[A]
0.2 V
0.2 V
0.30
0.3
0.3
0.5 V
0.5 V
0.40
0.4
0.4
BSS169
10 V
10 V
########
########
1 V
1 V
0.50
0.5
0.5