BSS169H6327XT Infineon Technologies, BSS169H6327XT Datasheet - Page 2

• Manufacturer Part Number: BSS169H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS169H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 mA
• Resistance Drain-source Rds (on): 6 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 27 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 2.7 ns
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: BSS169 BSS169H6327XTSA1 H6327

Rev. 1.8
Rev. 1.8
2)
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
Transconductance
Threshold voltage V
J
K
L
M
N
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
GS(th)
sorted in bands
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
I
R
g
V
D(off)
GSS
DSS
fs
(BR)DSS
GS(th)
GS(th)
thJA
DS(on)
2)
minimal footprint
V
V
V
V
V
V
V
V
V
V
|V
I
V
D
GS
DS
DS
GS
DS
GS
GS
GS
GS
GS
DS
=0.14 A
DS
page 2
page 2
=-10 V, I
=3 V, I
=100 V,
=-10 V, T
=100 V,
=-10 V, T
=20 V, V
=0 V, V
=0 V, I
=10 V, I
=3 V, I
|>2|I
D
|R
D
D
D
DS
=50 µA
=50 µA
=0.05 A
D
DS(on)max
D
DS
=0.17 A
j
j
=10 V
=250 µA
=25 °C
=125 °C
=0 V
,
-2.15
-2.45
min.
0.10
100
-2.9
-2.3
-2.6
90
-2
-
-
-
-
-
-
Values
0.19
typ.
-2.2
5.3
2.9
-
-
-
-
-
-
-
-
-
-
-
max.
-1.95
-2.25
350
-1.8
-1.8
-2.1
-2.4
0.1
10
10
12
6
-
-
-
BSS169
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Unit
K/W
V
µA
nA
mA
Ω
S
V